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首页> 外文期刊>Applied Surface Science >Low temperature processing of A1_2O_3-GPTMS-PMMA hybrid films with applications to high-performance ZnO thin-film transistors
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Low temperature processing of A1_2O_3-GPTMS-PMMA hybrid films with applications to high-performance ZnO thin-film transistors

机译：A1_2O_3-GPTMS-PMMA杂化膜的低温处理及其在高性能ZnO薄膜晶体管中的应用

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摘要

In this work we evaluate the synthesis of inorganic-organic Al2O3-GPTMS-PMMA hybrid films using a low temperature sol-gel process and their use as gate dielectric for thin film transistors (TFTs). The hybrid films were deposited by dip coating process and then annealed at 150 degrees C in air. The analysis of the hybrid films was performed by UV-VIS spectroscopy, FTIR, AFM, SEM, C-V and I-V measurements. The optical transparency above 85% in the visible range and homogeneity of the hybrid films support the proper link between inorganic and organic phases with strong bonds. At microscopic level, the hybrid films have uniform surface roughness lower than 1 nm. The C-V and I-V measurements performed on MIM structures showed leakage current density in the order of 10(-7)A/cm(2) at 104 kV/cm electric field. Capacitance and dielectric constant measured at 1 kHz were 20.4 pF and of 6.2, respectively. TFTs were fabricated using bottom gate and aluminium top contacts to obtain mobilities of 4.5 cm(2)/Vs, threshold voltage of 0.7 V and I-on/I-off ratio of 10(7), while mantaining operating voltage under 8 V.
机译：在这项工作中，我们评估了使用低温溶胶-凝胶工艺合成无机-有机Al2O3-GPTMS-PMMA杂化膜及其作为薄膜晶体管（TFT）的栅极电介质的用途。通过浸涂工艺沉积杂化膜，然后在空气中在150摄氏度下退火。通过UV-VIS光谱，FTIR，AFM，SEM，C-V和I-V测量来进行杂化膜的分析。杂化膜在可见光范围内的均匀性高于85％的光学透明度，支持具有牢固键合的无机相和有机相之间的适当连接。在微观水平上，杂化膜具有低于1nm的均匀表面粗糙度。在MIM结构上执行的C-V和I-V测量显示，在104 kV / cm电场下，泄漏电流密度约为10（-7）A / cm（2）。在1 kHz下测得的电容和介电常数分别为20.4 pF和6.2。使用底栅和铝顶触点制造TFT，以获得4.5 cm（2）/ Vs的迁移率，0.7 V的阈值电压和10（7）的I-on / I-off比，同时将工作电压保持在8 V以下。

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