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首页> 外文期刊>Applied Surface Science >Nanoscale etching of Ⅲ-Ⅴ semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry
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Nanoscale etching of Ⅲ-Ⅴ semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry

机译：酸性过氧化氢溶液中的Ⅲ-Ⅴ族半导体的纳米级蚀刻：GaAs和InP，表面化学形成鲜明对比

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摘要

In this study of nanoscale etching for state-of-the-art device technology, the importance of surface chemistry, in particular the nature of the surface oxide, is demonstrated for two III-V materials. Striking differences in etching kinetics were found for GaAs and InP in sulphuric and hydrochloric acidic solutions containing hydrogen peroxide. Under similar conditions, etching of GaAs was much faster, while the dependence of the etch rate on pH, and on H2O2 and acid concentrations also differed markedly for the two semiconductors. Surface analysis techniques provided information on the product layer present after etching: strongly non-stoichiometric porous (hydr) oxides on GaAs and a thin stoichiometric oxide that forms a blocking layer on InP. Reaction schemes are provided that allow one to understand the results, in particular the marked difference in etch rate and the contrasting role of chloride in the dissolution of the two semiconductors. A critical factor in determining the surface chemistry is considered to be the ease with which a proton can be removed from the group V hydroxide, which is formed in the initial etching step (the breaking of the III-V surface bond).
机译：在这项针对最先进设备技术的纳米级蚀刻研究中，表面化学的重要性，特别是表面氧化物的性质，已证明对两种III-V材料具有重要意义。在含过氧化氢的硫酸和盐酸溶液中，发现GaAs和InP的蚀刻动力学存在显着差异。在相似的条件下，GaAs的蚀刻速度要快得多，而两种半导体的蚀刻速率对pH值，H2O2和酸浓度的依赖性也显着不同。表面分析技术提供了有关蚀刻后存在的产品层的信息：GaAs上的非化学计量的多孔（水）氧化物和形成InP阻挡层的化学计量的稀氧化物。提供了使人们理解结果的反应方案，特别是蚀刻速率的显着差异和氯化物在两种半导体的溶解中的对比作用。决定表面化学性质的关键因素被认为是质子可以容易地从最初的蚀刻步骤（破坏III-V表面键合）中形成的V族氢氧化物上除去的质子。

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