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首页> 外文期刊>Applied Surface Science >Effect of C_4H_6O_6 concentration on the properties of SnS thin films for solar cell applications
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Effect of C_4H_6O_6 concentration on the properties of SnS thin films for solar cell applications

机译：C_4H_6O_6浓度对太阳能电池应用SnS薄膜性能的影响

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摘要

SnS thin films were prepared by chemical bath deposition using an environmentally friendly and economic complexing agent, tartaric acid (C4H6O6) with different concentrations. X-ray diffraction analysis confirmed that all the deposited films exhibited polycrystalline nature with a predominant plane of (1 1 1) related to an orthorhombic structure. The intensity of the (1 1 1) plane increased with increasing concentration of the complexing agent. Raman spectra of the films showed the characteristic vibrational modes at 94, 160, 191, and 217 cm(-1), corresponding to orthorhombic SnS. SEM micrographs showed homogeneous surfaces with the presence of nut-shaped grains. The optical absorption coefficient for the prepared films was 10(4) cm(-1), representing that the deposited films showed high absorption. Electrical studies revealed the p-type conducting nature of the deposited films. The SnS solar cell fabricated with a tartaric acid concentration of 1.2 M showed the highest efficiency of 1.62% with an open-circuit voltage of 0.283 V, a short-circuit current density of 13.9 mA cm(-2), and a fill factor of 41.1%.
机译：SnS薄膜是通过化学浴沉积使用环境友好且经济的络合剂，酒石酸（C4H6O6）和不同浓度制备的。 X射线衍射分析证实，所有沉积的膜均表现出多晶性质，其主要平面为（1 1 1），与正交晶结构有关。 （1 1 1）平面的强度随着络合剂浓度的增加而增加。薄膜的拉曼光谱显示在94、160、191和217 cm（-1）处的特征振动模式，对应于正交SnS。 SEM显微照片显示具有坚果形晶粒的均匀表面。制备的膜的光吸收系数＞ 10（4）cm（-1），表示沉积的膜显示出高吸收。电学研究揭示了沉积膜的p型导电性质。酒石酸浓度为1.2 M的SnS太阳能电池在开路电压为0.283 V，短路电流密度为13.9 mA cm（-2），填充系数为0.23 V时显示出最高效率1.62％。 41.1％。

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