Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing

Lian S. Y.; Kim K. J.; Kim T. G.; Hofmann S.; Wang J. Y.

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Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing

机译：Ge / Si多层SIMS深度剖析中层厚度的预测和实验确定：优先溅射和原子混合的影响

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A comparison is performed between the experimentally determined variation of the layer thickness at 50 at% with the primary ion energy and the prediction of this variation and of the layer thickness at 50% amplitude by the Mixing-Roughness-Information depth (MRI) model for SIMS depth profiles of Ge/Si multilayers. Reasonable agreement was obtained by taking into account the influence of the primary ion energy on both preferential sputtering and atomic mixing length. In both cases, the determined layer thickness increases with ion energy for the component with higher sputtering rate (Ge) and decreases for the one with lower sputtering rate (Si).

机译：在实验确定的50 at％的层厚度变化与一次离子能量之间进行比较，并通过混合粗糙度信息深度（MRI）模型对该变化和50％振幅的层厚度预测之间进行比较Ge / Si多层膜的SIMS深度剖面。通过考虑一次离子能量对优先溅射和原子混合长度的影响，得出了合理的共识。在两种情况下，对于具有较高溅射速率（Ge）的部件，所确定的层厚度随离子能量而增加，而对于具有较低溅射速率（Si）的部件，所确定的层厚度减小。

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来源
《Applied Surface Science》 |2019年第1期|1103-1108|共6页
作者
Lian S. Y.; Kim K. J.; Kim T. G.; Hofmann S.; Wang J. Y.;
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作者单位

Shantou Univ, Dept Phys, 243 Daxue Rd, Shantou 515063, Guangdong, Peoples R China;

Korea Res Inst Stand & Sci, Div Ind Metrol, 273 Gajeong Ro, Daejeon 34113, South Korea;

Korea Res Inst Stand & Sci, Div Ind Metrol, 273 Gajeong Ro, Daejeon 34113, South Korea;

Shantou Univ, Dept Phys, 243 Daxue Rd, Shantou 515063, Guangdong, Peoples R China|Max Planck Inst Intelligent Syst, Heisenbergstr 3, D-70569 Stuttgart, Germany;

Shantou Univ, Dept Phys, 243 Daxue Rd, Shantou 515063, Guangdong, Peoples R China;

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正文语种 eng
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关键词
Multilayer thickness; Sputter depth profiling; SIMS; Preferential sputtering;

机译：多层厚度溅射深度分析SIMS优先溅射;

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1. Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing [J] . Lian S. Y., Kim K. J., Kim T. G., Applied Surface Science . 2019,第Jul1期

机译：GE / Si多层模拟深度分析中层厚度的预测和实验测定：优先溅射和原子混合的影响
2. Preferential sputtering effects in depth profiling of multilayers with SIMS, XPS and AES [J] . Hofmann S., Zhou G., Kovac J., Applied Surface Science . 2019,第Jula31期

机译：利用SIMS，XPS和AES的多层深度剖析的优惠溅射效应
3. Correlation of depth resolution and preferential sputtering in depth profiles of thin layers by Secondary Ion Mass Spectrometry (SIMS) [J] . Hofmann S., Lian S. Y., Han Y. S., Thin Solid Films . 2018,第SEPa30期

机译：二次离子质谱（SIMS）的深度分辨率与薄层深度剖面中优先溅射的相关性
4. Determination of interdiffiision Coefficient in Nanolayered Structures by Auger Electron Spectroscopical Sputter Depth Profiling [C] . JiangYong Wang International conference on advanced materials . 2011

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6. Microstructure evolution with varied layer thickness in magnetron-sputtered Ni/C multilayer films [O] . Jichang Peng, Wenbin Li, Qiushi Huang, -1

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Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing

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