Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing

Lian S. Y.; Kim K. J.; Kim T. G.; Hofmann S.; Wang J. Y.

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Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing

机译：GE / Si多层模拟深度分析中层厚度的预测和实验测定：优先溅射和原子混合的影响

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A comparison is performed between the experimentally determined variation of the layer thickness at 50 at% with the primary ion energy and the prediction of this variation and of the layer thickness at 50% amplitude by the Mixing-Roughness-Information depth (MRI) model for SIMS depth profiles of Ge/Si multilayers. Reasonable agreement was obtained by taking into account the influence of the primary ion energy on both preferential sputtering and atomic mixing length. In both cases, the determined layer thickness increases with ion energy for the component with higher sputtering rate (Ge) and decreases for the one with lower sputtering rate (Si).

机译：在通过主离子能量的实验确定的层厚度的实验确定的层厚度的变化和通过混合粗糙度 - 信息深度（MRI）模型以50％幅度的预测和预测该变化和层厚度的预测SIMS GE / SI多层的深度配置文件。通过考虑原发性离子能量对优先溅射和原子混合长度的影响，获得了合理的协议。在这两种情况下，所确定的层厚度随着具有较高溅射速率（GE）的组件的离子能而增加，并且对于具有较低溅射速率（Si）的单个厚度降低。

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来源
《Applied Surface Science》 |2019年第jul1期|1103-1108|共6页
作者
Lian S. Y.; Kim K. J.; Kim T. G.; Hofmann S.; Wang J. Y.;
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作者单位

Shantou Univ Dept Phys 243 Daxue Rd Shantou 515063 Guangdong Peoples R China;

Korea Res Inst Stand & Sci Div Ind Metrol 273 Gajeong Ro Daejeon 34113 South Korea;

Korea Res Inst Stand & Sci Div Ind Metrol 273 Gajeong Ro Daejeon 34113 South Korea;

Shantou Univ Dept Phys 243 Daxue Rd Shantou 515063 Guangdong Peoples R China|Max Planck Inst Intelligent Syst Heisenbergstr 3 D-70569 Stuttgart Germany;

Shantou Univ Dept Phys 243 Daxue Rd Shantou 515063 Guangdong Peoples R China;

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正文语种 eng
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关键词
Multilayer thickness; Sputter depth profiling; SIMS; Preferential sputtering;

机译：多层厚度;溅射深度分析;SIMS;优惠溅射;

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专利

1. Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing [J] . Lian S. Y., Kim K. J., Kim T. G., Applied Surface Science . 2019,第JULa1期

机译：Ge / Si多层SIMS深度剖析中层厚度的预测和实验确定：优先溅射和原子混合的影响
2. Preferential sputtering effects in depth profiling of multilayers with SIMS, XPS and AES [J] . Hofmann S., Zhou G., Kovac J., Applied Surface Science . 2019,第Jula31期

机译：利用SIMS，XPS和AES的多层深度剖析的优惠溅射效应
3. Correlation of depth resolution and preferential sputtering in depth profiles of thin layers by Secondary Ion Mass Spectrometry (SIMS) [J] . Hofmann S., Lian S. Y., Han Y. S., Thin Solid Films . 2018,第SEPa30期

机译：二次离子质谱（SIMS）的深度分辨率与薄层深度剖面中优先溅射的相关性
4. Determination of interdiffiision Coefficient in Nanolayered Structures by Auger Electron Spectroscopical Sputter Depth Profiling [C] . JiangYong Wang International conference on advanced materials . 2011

机译：螺旋电子光谱溅射深度分析测定纳米结构中纳米结构中的间隙系数
5. Experimental and numerical determination of fluid velocity profiles and turbulence intensity in mixing vessels. [D] . Chou, Chun-Chiao. 1995

机译：实验和数值确定混合容器中的流速分布和湍流强度。
6. Microstructure evolution with varied layer thickness in magnetron-sputtered Ni/C multilayer films [O] . Jichang Peng, Wenbin Li, Qiushi Huang, -1

机译：磁控溅射镍/碳多层膜中层厚度变化的微观结构演变
7. Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles [O] . H.L. Kang, J.B. Lao, Z.P. Li, 2016

机译：通过量化AES和SIMS溅射深度剖面来重建GaAs / AlAs超晶格多层结构

Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing

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