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首页> 外文期刊>Applied Surface Science >Facile fabrication of periodic arrays of vertical Si nanoholes on (001)Si substrate with broadband light absorption properties
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Facile fabrication of periodic arrays of vertical Si nanoholes on (001)Si substrate with broadband light absorption properties

机译：（001）Si衬底上具有宽带光吸收特性的垂直Si纳米孔周期性阵列的便捷制造

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摘要

This study presents a facile and straightforward approach to fabricating periodic arrays of Au nanodisks and vertically aligned, depth- and morphology-controllable Si nanoholes on (001)Si substrates by combining self-assembled nanosphere lithography, selective Au wet etching, and Au nanodisk-catalyzed Si etching processes. All of the etching experiments were carried out in aqueous solutions at room temperature without using complex photolithography and hard-mask patterning processes. The shape, diameter, and spacing of the produced vertical Si nanoholes corresponded well to those of the catalytic Au nanodisks used, and the nanohole depth could be readily tuned from sub-micrometer to several micrometers by adjusting the Au nanodisk-catalyzed Si etching time. The Si substrates with nanohole-textured surfaces exhibited depth- dependent hydrophobic behaviors and broadband (400-1650 nm) light absorption properties. The measured integrated absorptance was found to increase with increasing the depth of Au nanodisk-embedded Si nanoholes and can reach up to 95% in the visible light region and 60% in the near-IR region. The resulting broadband absorption enhancement can be attributed to the combined effects of multiple scattering of light and localized surface plasmon resonance. The obtained results present the exciting prospects that the new combined approach proposed here would offer potential applications in constructing various high-efficiency nanohole array-based optoelectronic and photovoltaic devices.
机译：这项研究提出了一种简便而直接的方法，该方法通过结合自组装纳米球体光刻，选择性Au湿法刻蚀和Au纳米盘制备，来制造Au纳米盘的周期性阵列以及在（001）Si衬底上垂直对准，深度和形态可控的Si纳米孔的周期性阵列。催化的硅蚀刻工艺。所有蚀刻实验均在室温下在水溶液中进行，而无需使用复杂的光刻和硬掩模图案化工艺。所产生的垂直Si纳米孔的形状，直径和间距与所使用的催化Au纳米盘的形状，直径和间距非常吻合，并且通过调整Au纳米盘催化的Si刻蚀时间，纳米孔的深度可以轻松地从亚微米调整到几微米。具有纳米孔纹理化表面的Si衬底表现出深度依赖性的疏水行为和宽带（400-1650nm）的光吸收特性。发现所测量的积分吸收率随嵌入Au纳米盘的Si纳米孔深度的增加而增加，并且可以在可见光区域达到95％，在近红外区域达到60％。产生的宽带吸收增强可以归因于光的多次散射和局部表面等离子体共振的综合作用。获得的结果提供了令人兴奋的前景，即本文提出的新组合方法将为构建各种基于纳米孔阵列的高效光电和光伏器件提供潜在的应用。

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