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Factors controlling conductivity of PEDOT deposited using oxidative chemical vapor deposition

机译：控制使用氧化化学气相沉积法沉积的PEDOT的电导率的因素

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摘要

This study is aimed to enhance the understanding of the processing-structure-property relationship in oxidative chemical vapor deposition (oCVD) conjugated polymers. Particular focus is made on the substrate and oxidant temperatures for the oCVD poly(3 4-ethylenedioxythiophene) (PEDOT) growth and their effects on the structure and electrical properties on resulting thin films. Doping levels are evaluated using Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy, which is complemented by Hall Effect investigations. Further, the relationship between doping level and conjugation length is described with discussion on mean free path, where the mean free path of oCVD PEDOT (up to similar to 5 nm) is significantly larger than typical organic semiconductors and comparable to conventional inorganic counterparts. The mechanisms that govern oCVD film growth are suggested, which is strongly dependent on both substrate and oxidant sublimation temperatures. Finally, the carrier transport behaviors, dominated by conjugation and doping levels are discussed.
机译：这项研究旨在增进对氧化化学气相沉积（oCVD）共轭聚合物中加工结构性质关系的理解。特别关注oCVD聚（3 4-乙撑二氧噻吩）（PEDOT）生长的基材和氧化剂温度，以及它们对所得薄膜的结构和电性能的影响。使用傅立叶变换红外光谱和X射线光电子能谱评估掺杂水平，并辅以霍尔效应研究。此外，通过讨论平均自由程来描述掺杂水平与共轭长度之间的关系，其中oCVD PEDOT的平均自由程（高达5 nm）明显大于典型的有机半导体，并且可与常规的无机对应物相比。提出了控制oCVD膜生长的机理，该机理在很大程度上取决于底物和氧化剂的升华温度。最后，讨论了以共轭和掺杂水平为主导的载流子传输行为。

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