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首页> 外文期刊>Applied Surface Science >Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO_2 structure for applications to bipolar resistive switching
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Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO_2 structure for applications to bipolar resistive switching

机译：双层ZnO / ZrO_2结构中吉布斯自由能差和氧空位分布对双极电阻切换的影响

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摘要

We investigated the effects of the Gibbs free energy difference (Delta G(o)) and distribution of oxygen vacancies in a bilayer ZnO/ZrO2 structure. The device exhibited high endurance characteristics of up to 1000 DC repetitive resistive cycles, long retention (10(4)), and a low coefficient of variation of SET and RESET-voltages (6% and 5%, respectively). In addition, X-ray photoelectron spectroscopy (XPS) analysis of the ZnO and ZrO2 layers indicated that the oxygen vacancies/defects in the ZnO layer (44.13%) were larger than in the ZrO2 layer (34.11%), and that the oxygen ions of O-Zr (65.89%) were larger than those of O-Zn (55.87). This XPS analysis confirmed that the differing oxygen vacancy distributions in the ZnO/ZrO2 layer are responsible for improving the switching performance. The switching behavior, endurance, and retention time strongly depend on the types of electrode and switching materials used. We obtained qualitative and quantitative evidence that Delta G(o) of the oxide materials plays a significant role in determining the resistive switching characteristics. Bipolar switching mechanisms are explained by considering Delta G(o) in the ZnO and ZrO2 layers, where the formation and rupture of conductive filaments are caused by oxygen vacancies. Our findings suggest that a bilayer ZnO/ZrO2 structure is promising for application to non-volatile memory.
机译：我们调查了吉布斯自由能差（Delta G（o））和双层ZnO / ZrO2结构中氧空位的分布的影响。该器件具有高达1000个DC重复电阻循环的高耐力特性，较长的保持时间（10（4））和较低的SET和RESET电压变化系数（分别为6％和5％）。此外，对ZnO和ZrO2层的X射线光电子能谱（XPS）分析表明，ZnO层中的氧空位/缺陷（44.13％）比ZrO2层中的氧空位/缺陷大（34.11％），并且氧离子O-Zr（65.89％）大于O-Zn（55.87）。 XPS分析证实，ZnO / ZrO2层中不同的氧空位分布有助于改善开关性能。开关行为，耐久性和保留时间在很大程度上取决于所用电极和开关材料的类型。我们获得了定性和定量的证据，表明氧化物材料的Delta G（o）在确定电阻开关特性中起着重要作用。通过考虑ZnO和ZrO2层中的Delta G（o）来解释双极开关机制，其中导电丝的形成和破裂是由氧空位引起的。我们的发现表明，双层ZnO / ZrO2结构有望应用于非易失性存储器。

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