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Towards Oxide Electronics: a Roadmap

机译：朝向氧化物电子设备：路线图

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摘要

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community.Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics.
机译：在半个世纪的匆忙结束时，CMOS技术一直在经历恒定和令人惊叹的装置速度和密度，摩尔定律正在接近由物质的最终原子本质所提供的不可逾越的障碍。 21世纪科学家的一项重大挑战是寻找更换基于硅的CMOS半导体技术的新型战略，概念和材料，并在未来几十年中保证持续和稳定的技术进步。在材料课程中，候选人有助于这种重要的挑战，氧化物膜和异质结构是一种特别吸引人的狩猎地面。这种化合物的纯化学术语的巨大性，它们相关行为的复杂性以及它们显示的功能性质的复杂性已经使这些系统成为主题，全世界，强烈网络，动态和跨学科研究群落。犹太科学和技术一直是一个宽阔的四年项目的目标，以氧化物为基础的电子产品（待办事项），这已经在欧洲营运，并作为来自29欧盟的几百科学家参与其中参与者国家。在本综述和透视论文中，作为待办事项的最终可交付，讨论了作为未来信息和通信技术信息通信技术和能量的未来电子材料的机会。本文被组织为一系列贡献，所有这些贡献都被选中和命令作为更广泛的一般方案的个人构建块。经过编辑的简要序幕和介绍性贡献，两节遵循。首先主要致力于提供关于研究氧化物的最新理论和实验方法和生产氧化物基薄膜，异质结构和装置的视角。在第二，所有贡献都专用于氧化物薄膜和异质结构的不同特定领域，作为数据存储和计算，光学和等离子体，榴莲，能量转换和收获和电力电子设备。

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  • 来源
    《Applied Surface Science》 |2019年第jul15期|1-93|共93页
  • 作者

    Coll M.; Fontcuberta J.; Althammer M.; Bibes M.; Boschker H.; Calleja A.; Cheng G.; Cuoco M.; Dittmann R.; Dkhil B.; El Baggari I; Fanciulli M.; Fina I; Fortunato E.; Frontera C.; Fujita S.; Garcia V; Goennenwein S. T. B.; Granqvist C-G; Grollier J.; Gross R.; Hagfeldt A.; Herranz G.; Hono K.; Houwman E.; Huijben M.; Kalaboukhov A.; Keeble D. J.; Koster G.; Kourkoutis L. F.; Levy J.; Lira-Cantu M.; MacManus-Driscoll J. L.; Mannhart Jochen; Martins R.; Menzel S.; Mikolajick T.; Napari M.; Nguyen M. D.; Niklasson G.; Paillard C.; Panigrahi S.; Rijnders G.; Sanchez F.; Sanchis P.; Sanna S.; Schlom D. G.; Schroeder U.; Shen K. M.; Siemon A.; Spreitzer M.; Sukegawa H.; Tamayo R.; van den Brink J.; Pryds N.; Granozio F. Miletto;

  • 作者单位

    CSIC Inst Ciencia Mat Barcelona ICMAB Campus UAB Cerdanyola Del Valles 08193 Catalonia Spain;

    CSIC Inst Ciencia Mat Barcelona ICMAB Campus UAB Cerdanyola Del Valles 08193 Catalonia Spain;

    Bayer Akad Wissensch Walther Meissner Inst D-85748 Garching Germany|Tech Univ Munich Phys Dept D-85748 Garching Germany;

    Univ Paris Sud Univ Paris Saclay Thales Unite Mixte Phys CNRS F-91767 Palaiseau France;

    Max Planck Inst Solid State Res Heisenbergstr 1 D-70569 Stuttgart Germany;

    OXOLUTIA SL Avda Castell Barbera 26 Tellers 13 Nau 1 Barcelona 08210 Spain;

    Univ Sci & Technol China CAS Key Lab Microscale Magnet Resonance Hefei 230026 Anhui Peoples R China|Univ Sci & Technol China Dept Modern Phys Hefei 230026 Anhui Peoples R China|Univ Pittsburgh Dept Phys & Astron Pittsburgh PA 15260 USA|Pittsburgh Quantum Inst Pittsburgh PA 15260 USA;

    Univ Salerno CNR SPIN IT-84084 Fisciano SA Italy|Univ Salerno Dipartimento Fis ER Caianiello IT-84084 Fisciano SA Italy;

    Forschungszentrum Julich Peter Grunberg Inst PGI 7 D-52425 Julich Germany;

    Univ Paris Saclay CNRS UMR 8580 Cent Supelec Lab Struct Proprietes & Modelisat Solides F-91190 Gif Sur Yvette France;

    Cornell Univ Dept Phys Ithaca NY 14853 USA;

    Univ Milano Bicocca Dept Mat Sci Milan Italy;

    CSIC Inst Ciencia Mat Barcelona ICMAB Campus UAB Cerdanyola Del Valles 08193 Catalonia Spain;

    Univ NOVA Lisboa UNL FCT Dept Ciencia Mat CENIMAT i3N Lisbon Portugal|CEMOP UNINOVA P-2829516 Caparica Portugal;

    CSIC Inst Ciencia Mat Barcelona ICMAB Campus UAB Cerdanyola Del Valles 08193 Catalonia Spain;

    Kyoto Univ Kyoto 6158520 Japan;

    Univ Paris Sud Univ Paris Saclay Thales Unite Mixte Phys CNRS F-91767 Palaiseau France;

    Tech Univ Dresden Inst Festkorperphys D-01062 Dresden Germany|Tech Univ Dresden Ctr Transport & Devices Emergent Mat D-01062 Dresden Germany;

    Upp Sala Univ Angstrom Lab Dept Engn Sci POB 534 SE-75121 Uppsala Sweden;

    Univ Paris Sud Univ Paris Saclay Thales Unite Mixte Phys CNRS F-91767 Palaiseau France;

    Bayer Akad Wissensch Walther Meissner Inst D-85748 Garching Germany|Tech Univ Munich Phys Dept D-85748 Garching Germany|NIM D-80799 Munich Germany;

    Ecole Polytech Fed Lausanne Inst Chem Sci & Engn Lab Photomol Sci CH-1015 Lausanne Switzerland;

    CSIC Inst Ciencia Mat Barcelona ICMAB Campus UAB Cerdanyola Del Valles 08193 Catalonia Spain;

    NIMS Res Ctr Magnet & Spintron Mat 1-2-1 Sengen Tsukuba Ibaraki 3050047 Japan;

    Univ Twente MESA Inst Nanotechnol NL-7500 AE Enschede Netherlands;

    Univ Twente MESA Inst Nanotechnol NL-7500 AE Enschede Netherlands;

    Chalmers Univ Technol Dept Microtechnol & Nanosci MC2 Gothenburg Sweden;

    Univ Dundee Sch Sci & Engn Carnegie Lab Phys SUPA Dundee DD1 4HN Scotland;

    Univ Twente MESA Inst Nanotechnol NL-7500 AE Enschede Netherlands;

    Kavli Inst Cornell Nanoscale Sci Ithaca NY 14853 USA|Cornell Univ Sch Appl & Engn Phys Ithaca NY 14853 USA;

    Bayer Akad Wissensch Walther Meissner Inst D-85748 Garching Germany|Pittsburgh Quantum Inst Pittsburgh PA 15260 USA;

    CSIC Catalan Inst Nanosci & Nanotechnol ICN2 Campus UAB E-08193 Barcelona Spain|BIST Campus UAB E-08193 Barcelona Spain;

    Univ Cambridge Dept Mat Sci & Met 27 Charles Babbage Rd Cambridge CB3 0FS England;

    Max Planck Inst Solid State Res Heisenbergstr 1 D-70569 Stuttgart Germany;

    Univ Milano Bicocca Dept Mat Sci Milan Italy|IMM CNR MDM Lab Agrate Brianza Italy;

    Pittsburgh Quantum Inst Pittsburgh PA 15260 USA;

    NaMLab gGmbH Noethnitzer Str 64 D-01187 Dresden Germany|Tech Univ Dresden Chair Nanoelect Mat D-01062 Dresden Germany;

    Univ Cambridge Dept Mat Sci & Met 27 Charles Babbage Rd Cambridge CB3 0FS England;

    Univ Twente MESA Inst Nanotechnol NL-7500 AE Enschede Netherlands;

    Upp Sala Univ Angstrom Lab Dept Engn Sci POB 534 SE-75121 Uppsala Sweden;

    Univ Arkansas Phys Dept Fayetteville AR 72701 USA;

    Univ NOVA Lisboa UNL FCT Dept Ciencia Mat CENIMAT i3N Lisbon Portugal|CEMOP UNINOVA P-2829516 Caparica Portugal;

    Univ Twente MESA Inst Nanotechnol NL-7500 AE Enschede Netherlands;

    CSIC Inst Ciencia Mat Barcelona ICMAB Campus UAB Cerdanyola Del Valles 08193 Catalonia Spain;

    Univ Politecn Valencia Nanophoton Technol Ctr Camino Vera S-N E-46022 Valencia Spain;

    Tech Univ Denmark Dept Energy Storage & Convers DK-4000 Roskilde Denmark;

    Cornell Univ Dept Phys Lab Atom & Solid State Phys Ithaca NY 14853 USA|Cornell Univ Dept Mat Sci & Engn Ithaca NY 14853 USA;

    NaMLab gGmbH Noethnitzer Str 64 D-01187 Dresden Germany;

    Kavli Inst Cornell Nanoscale Sci Ithaca NY 14853 USA|Cornell Univ Dept Phys Lab Atom & Solid State Phys Ithaca NY 14853 USA;

    Rhein Westfal TH Aachen Inst Werkstoffe Elektrotech IWE 2 D-52066 Aachen Germany;

    Jozef Stefan Inst Adv Mat Dept Jamova Cesta 39 Ljubljana 1000 Slovenia;

    NIMS Res Ctr Magnet & Spintron Mat 1-2-1 Sengen Tsukuba Ibaraki 3050047 Japan;

    OXOLUTIA SL Avda Castell Barbera 26 Tellers 13 Nau 1 Barcelona 08210 Spain;

    IFW Dresden Inst Theoret Solid State Phys Helm Holtzstr 20 D-01069 Dresden Germany;

    Tech Univ Denmark Dept Energy Storage & Convers DK-4000 Roskilde Denmark;

    CNR SPIN Naples Unit Complesso Univ Monte St Angelo Via Cinthia IT-80126 Naples Italy;

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