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首页> 外文期刊>Applied Surface Science >Stable hybrid organic/inorganic multiple-read quantum-dot memory devicev based on a PVK/QDs solution
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Stable hybrid organic/inorganic multiple-read quantum-dot memory devicev based on a PVK/QDs solution

机译：基于PVK / QDS解决方案的稳定混合式有机/无机多读量子点存储器DV

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摘要

A thin-film memory device is proposed herein, based on quantum dots (QDs) with bi-stable characteristics under a positive voltage bias. The synthesized QDs had a CdSe/ZnS core/shell structure. The charge confinement effect within the QDs in the charge-storage layer was enhanced by adding (poly(9-vinylcarbazole)) (PVK). As the PVK concentration increases, the on/off ratio of the device increases. Noise was also reduced and stable I-V characteristics were demonstrated. Each thin film was fabricated by a spin-coating method, among solution process methods. The on/off ratio of the fabricated device was found to be maximum 378 x 10(3) at 1.5 wt% PVK concentration. The initial on/off state was maintained even when a negative voltage (commonly used for the "erase" function) was applied. In addition, the write voltage of the fabricated device using the conductive polymer polyTPD was reduced from 2.8 to 1.7 V. By optimizing PVK concentration and forming the poly-TPD thin film, the fabricated memory device had an on/off ratio of about 4 x 10(3) at 0.5 V and the stored current maintained the initial value even after 200 h. Even with a single write process, the initially formed high state is maintained for more than 200 h, and it is possible to read repeatedly.
机译：本文基于在正电压偏压下具有双稳态特性的量子点（QDS），本文提出了一种薄膜存储器件。合成的QDS具有CDSE / ZnS核心/壳结构。通过加入（聚（9-乙烯基咔唑））（PVK）增强了电荷储存层中QDS内的电荷限制效果。随着PVK浓度的增加，装置的开/关比增加。噪音也降低，证明了稳定的I-V特性。通过旋涂法，在溶液过程方法中通过旋涂方法制造各薄膜。发现制造装置的开/关比在1.5wt％pvk浓度下是最大378×10（3）。即使在应用负电压（常用于“擦除”功能）时也保持初始开/关状态。另外，使用导电聚合物PolyTPD的制造装置的写入电压从2.8〜1.7V降低。通过优化PVK浓度并形成多TPD薄膜，制造的存储器件具有约4×的开/关比10（3）在0.5V时，储存的电流即使在200小时后也保持初始值。即使具有单个写入过程，最初形成的高状态也保持超过200小时，并且可以重复读取。

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  • 来源
    《Applied Surface Science》 |2019年第jul1期|25-32|共8页
  • 作者

    Kim Sae-Wan; Kwon Jin-Beom; Kim Na-Ri; Lee Jae-Sung; Lee Sang-Won; Kang Byoung-Ho; Kim Ju-Seong; Xu Binrui; Bae Jin-Hyuk; Kang Shin-Won;

  • 作者单位

    Kyungpook Natl Univ Coll IT Engn Sch Elect Engn 1370 Sankyuk Dong Daegu South Korea;

    Kyungpook Natl Univ Coll IT Engn Sch Elect Engn 1370 Sankyuk Dong Daegu South Korea;

    Kyungpook Natl Univ Coll IT Engn Sch Elect Engn 1370 Sankyuk Dong Daegu South Korea;

    KIST Sensor Syst Res Ctr 5 Hwarang Ro 14 Gil Seoul 02792 South Korea;

    Daegu Technopk Mobile Technol Convergence Ctr 46-17 Seongseogongdan Ro Daegu 704801 South Korea;

    Dong A Carbon Technol Co 41-3 Gyo 8 Gil Chilgok Gun Gyeongsangbuk D South Korea;

    Kyungpook Natl Univ Coll IT Engn Sch Elect Engn 1370 Sankyuk Dong Daegu South Korea;

    Kyungpook Natl Univ Coll IT Engn Sch Elect Engn 1370 Sankyuk Dong Daegu South Korea;

    Kyungpook Natl Univ Coll IT Engn Sch Elect Engn 1370 Sankyuk Dong Daegu South Korea;

    Kyungpook Natl Univ Coll IT Engn Sch Elect Engn 1370 Sankyuk Dong Daegu South Korea;

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  • 正文语种 eng
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  • 关键词

    CdSe/ZnS quantum dots; Memory device; PVK; Poly-TPD; Multiple-read memory;

    机译：CDSE / ZNS量子点;存储器设备;PVK;POLY-TPD;多读内存;

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