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A theoretical and experimental study on effect of growth time on self- catalyzed InAs nanowires

机译：生长时间对自催化INAS纳米线影响的理论与实验研究

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摘要

We in detail investigated the effect of growth time on InAs nanowires (NWs) grown on Si substrates by metal-organic chemical vapor deposition. It is found that the axial growth of InAs NWs is nonlinear and shows different trends with different NW diameters. Thin NWs grow faster than thick NWs in length, and the radius of both thin and thick NWs have no dependence on growth time. Based on self-catalyzed growth mechanism, we established a kinetic growth process to simulate the growth of InAs NWs on Si. We analyzed some dependences, including length-time, diameter-time and length-diameter dependences. Calculations are in good agreements with experimental ones. It indicates that growth saturation and growth rates of NWs are determined by diffusion length of In adatoms, initial diameter of seed particles and the amount of adatoms per unit area.
机译：我们详细研究了通过金属 - 有机化学气相沉积在Si基材上生长的生长时间对纳米线（NWS）的影响。发现INAS NWS的轴向生长是非线性的，并且显示出不同的NW直径的不同趋势。薄NWS的长度比厚NW的长度快，薄和厚NW的半径没有依赖生长时间。基于自催化的生长机制，我们建立了一种动力学生长过程，以模拟INAS NWS对SI的生长。我们分析了一些依赖性，包括长时间，直径时间和长度直径的依赖性。计算与实验结果符合良好的协议。表明NWS的生长饱和度和生长速率由adatoms的扩散长度，种子颗粒的初始直径和每单位面积的adatom的量决定。

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  • 来源
    《Applied Surface Science》 |2020年第jul15期|146174.1-146174.7|共7页
  • 作者

    Wang Xiaoye; Bai Xue; Yang Xiaoguang; Liu Xiaoming; Du Wenna; Yang Tao;

  • 作者单位

    Lanzhou Univ Technol Coll Elect & Informat Engn Lanzhou 730050 Peoples R China|Lanzhou Univ Technol Key Lab Gansu Adv Control Ind Proc Lanzhou 730050 Peoples R China|Lanzhou Univ Technol Natl Demonstrat Ctr Expt Elect & Control Engn Edu Lanzhou 730050 Peoples R China;

    Lanzhou Univ Sch Phys Sci & Technol Lanzhou 730000 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Opto Elect Engn Beijing 100049 Peoples R China;

    Primary Sch Hexipu Town 1 Yongchang 737202 Gansu Province Peoples R China;

    Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Opto Elect Engn Beijing 100049 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    InAs nanowires; Self-catalyzed growth; MOCVD; Kinetic growth process;

    机译：INAS纳米线;自我催化的生长;MOCVD;动力学生长过程;

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