Laser-induced growth of large-area epitaxial graphene with low sheet resistance on 4H-SiC(0001)

Liu Zhizhuang; Xu Qingfang; Zhang Chitengfei; Sun Qingyun; Wang Chuanbin; Dong Mingdong; Wang Zegao; Ohmori Hitoshi; Kosinova Marina; Goto Takashi; Tu Rong; Zhang Song

首页> 外文期刊>Applied Surface Science >Laser-induced growth of large-area epitaxial graphene with low sheet resistance on 4H-SiC(0001)

【24h】

Laser-induced growth of large-area epitaxial graphene with low sheet resistance on 4H-SiC(0001)

机译：激光诱导的大面积外延石墨烯生长，在4H-SiC上具有低薄层电阻（0001）

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Multilayer graphene on SiC is a promising material due to its compatibility with modern electronics technology. Herein, we demonstrate the growth of large-area (similar to 10x5 mm(2)), high-quality (D/G area ratio: similar to 0.03) epitaxial graphene on 4H-SiC(0001) using a high-power continuous laser with an extremely fast heating rate of 500 degrees C/s. As the growth temperature rises from 1550 degrees C to 1780 degrees C, the number of graphene layers increases from three to more than ten. The obtained graphene/SiC samples are highly conductive, with a sheet resistance of as low as similar to 0.43 O/sq. The high power and fast heating rate of the laser contribute to the formation of large-area and low-sheet-resistance graphene. The high conductivity makes graphene/SiC a very promising material for applications in conductive films. The growth mechanism of graphene and the influence of the structural properties of graphene on the conductivity are also discussed.

机译：由于其与现代电子技术的兼容性，Multilayaer Graphene是一种有希望的材料。在此，我们使用高功率连续激光显示在4H-SiC（0001）上的大面积（类似于10x5mm（2）），高质量（D / G面积比率：类似于0.03）的外延石墨烯的生长具有极快的加热速率为500℃/ s。随着生长温度从1550摄氏度升高到1780℃，石墨烯层的数量从三到大于十增加。所得石墨烯/ SiC样品具有高导电，薄层电阻与0.43 o / Sq一样低。激光的高功率和快速加热速率有助于形成大面积和低板电阻石墨烯。高电导率使得石墨烯/ SiC成为导电膜中的应用的非常有希望的材料。还讨论了石墨烯的生长机制及石墨烯结构性能对导电性的影响。

著录项

来源
《Applied Surface Science》 |2020年第1期|145938.1-145938.8|共8页
作者
Liu Zhizhuang; Xu Qingfang; Zhang Chitengfei; Sun Qingyun; Wang Chuanbin; Dong Mingdong; Wang Zegao; Ohmori Hitoshi; Kosinova Marina; Goto Takashi; Tu Rong; Zhang Song;
展开▼
作者单位

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Aarhus Univ Interdisciplinary Nanosci Ctr iNANO DK-8000 Aarhus Denmark;

Aarhus Univ Interdisciplinary Nanosci Ctr iNANO DK-8000 Aarhus Denmark;

Inst Phys & Chem Res 2-1 Hirosawa Wako Saitama 3510198 Japan;

Russian Acad Sci Nikolaev Inst Inorgan Chem Siberian Branch 3 Acad Lavrerntiev Pr Novosibirsk 630090 Russia;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth & Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
Continuous laser; Large-area; Epitaxial graphene; 4H-SiC; Sheet resistance;

机译：连续激光;大面积;外延石墨烯;4H-SIC;薄层电阻;

相似文献

外文文献
中文文献
专利

1. Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates [J] . Wang Dang-Chao, Zhang Yu-Ming 中国物理：英文版 . 2014,第007期

机译：在4H-SiC（0001）衬底上在4 mbar的压力下生长的大面积外延石墨烯的光谱和扫描探针分析
2. Epitaxial growth of large-area bilayer graphene on Ru(0001) [J] . Yande Que, Wende Xiao, Xiangmin Fei, Applied Physics Letters . 2014,第9期

机译：Ru（0001）上大面积双层石墨烯的外延生长
3. Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation [J] . Dharmaraj P., Jeganathan K., Parthiban S., Applied Physics Letters . 2014,第18期

机译：电子束辐照在4H-SiC（0001）衬底上Bernal双层外延石墨烯的选择性区域生长
4. Spatially graded graphitization on 4H-SiC (0001) with Si-sublimation gradient for high quality epitaxial graphene growth [C] . Shoji Ushio, Yasunori Kutsuma, Arata Yoshii, ICSCRM 2011;International conference on silicon carbide and related materials . 2012

机译：Si升华梯度在4H-SiC（0001）上进行空间梯度石墨化，以实现高质量的外延石墨烯生长
5. 2-D electronic materials: Epitaxial growth of graphene on 6H-silicon carbide (0001) [D] . Campbell, Dorr Oliver. 2015

机译：2-D电子材料：6h-碳化硅上石墨烯的外延生长（0001）
6. High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen [O] . E. Pallecchi, F. Lafont, V. Cavaliere, -1

机译：氢气下生长后退火在4H-SiC（0001）上外延石墨烯中的高电子迁移率
7. High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen [O] . Pallecchi, E., Lafont, F., Cavaliere, V., 2014

机译：外延石墨烯在4H-siC（0001）上的高电子迁移率在氢气下进行后生长退火

Laser-induced growth of large-area epitaxial graphene with low sheet resistance on 4H-SiC(0001)

摘要

著录项

相似文献

相关主题

期刊订阅