• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
【24h】

Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study

机译：通过热处理血浆增强原子层的热处理ZnO：原位研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Properties and performance of materials are closely connected. In order to obtain piezoelectric and lasing optical quality, ZnO has to be free of defects and highly crystalline. Instead, conductivity depends upon such defects, making it not trivial to aim at a specific set of properties in a single step. In this regard, we studied in situ the effect of temperature as an additional knob to finely control such properties. In this contribution, plasma enhanced atomic layer deposited (PE-ALD) zinc oxide (ZnO) layers, deposited between 25 degrees C and 250 degrees C, were studied in situ during annealing in air, and the opto-chemical and structural characteristics of the oxides were followed as a function of temperature. In situ spectroscopic ellipsometry (SE) and X-ray diffraction (XRD) were adopted to identify temperature windows where major structural and optical changes in the material occurred. Two temperature regions were identified for the effusion of adsorbed gases and minor structural rearrangements (180-280 degrees C) and for the growth/coalescence of ZnO crystals and its densification (360-500 degrees C). The results were corroborated by ex situ SE, XRD, UV-Vis and X-ray photoelectron spectroscopy. The in situ study revealed differences among the ZnO layers deposited at different temperatures, giving additional insights on the material properties deposited by PE-ALD.
机译：材料的性能和性能密切相关。为了获得压电和激光光学质量，ZnO必须没有缺陷和高度结晶。相反，电导率取决于这种缺陷，使得它不普遍地瞄准单一步骤中的特定属性。在这方面，我们研究了温度的影响作为额外的旋钮，以细化这些性质。在该贡献中，在空气退火期间，在25℃和250℃之间沉积（PE-ALD）沉积（PE-ALD）氧化锌（ZnO）层的氧化锌（ZnO）层，以及光学化学和结构特征遵循氧化物作为温度的函数。采用原位光谱椭圆形测定法（SE）和X射线衍射（XRD）识别温度窗口，其中发生材料的主要结构和光学变化。鉴定了两个温度区域，用于模糊吸附的气体和次要结构重排（180-280℃）和ZnO晶体的生长/聚结（360-500℃）。结果由EX原位SE，XRD，UV-VI和X射线光电子能谱进行证实。原位研究揭示了在不同温度下沉积的ZnO层之间的差异，对PE-ALD沉积的材料性质提供了额外的见解。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号