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Research on Formation of Ultra-thin Gate Oxide by Using Water Vapor Generator (WVG)

机译：水蒸气发生器（WVG）形成超薄栅氧化物的研究

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In nonvolatile memories such as flash memory, the thin oxide film is used as a tunneling dielectric for electron transportation to the floating gate in semiconductor manufacturing. The oxide film should have a strong dielectric strength the reason why electron tunneling is carried out under high electric field condition. During transportation of the carriers through the oxide, some of them are trapped in oxide film. Carrier trapping gives rise to the space change in the oxide, causing window narrowing and oxide breakdown. Therefore, high-reliability ultra-thin oxide is required for nonvolatile memories. The purpose of this paper investigates performance of a newly developed WVG system by catalytic reaction for gate oxide formation process required ultraclean ambience. The dependence of electrical characteristics on gate oxidation ambience using WVG system was investigated. From these results, we suggest a newly developed technology for ultra-thin gate oxide formation with high reliability.
机译：在诸如闪存之类的非易失性存储器中，薄氧化膜被用作隧穿电介质，以在半导体制造中将电子传输到浮栅。氧化膜应具有强的介电强度，这是在高电场条件下进行电子隧穿的原因。在载体通过氧化物的运输过程中，其中一些被捕获在氧化物膜中。载流子俘获引起氧化物中的空间变化，从而导致窗口变窄和氧化物击穿。因此，非易失性存储器需要高可靠性的超薄氧化物。本文的目的是研究一种新开发的WVG系统的性能，该系统通过催化反应形成需要超净氛围的栅极氧化物形成过程。使用WVG系统研究了电学特性对栅极氧化环境的依赖性。根据这些结果，我们提出了一种新的高可靠性超薄栅极氧化物形成技术。

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