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Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

机译：SAPMAC方法在大型蓝宝石生长过程中的热应力和裂纹

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The finite-element method has been used to study the thermal stress distribution in large-sized sapphire crystals grown with the sapphire growth technique with micro-pulling and shoulder-expanding at cooled center (SAPMAC) method. A critical defect model has been established to explain the growth and propagation of cracks during the sapphire growing process. It is demonstrated that the stress field depends on the growth rate, the ambient temperature and the crystallizing direction. High stresses always exist near the growth interfaces, at the shoulder-expanding locations, the tailing locations and the sites where the diameters undergo sharp changes. The maximum stresses always occur at the interface of seeds and crystals. Cracks often form in the critical defect region and spread in the m-planes and a-planes under applied tensile stresses during crystal growth. The experimental results have verified that with the improved system of crystal growth and well-controlled techniques, the large-sized sapphire crystals of high quality can be grown due to absence of cracks.
机译：有限元方法已被用于研究采用蓝宝石生长技术，采用微拉和冷却中心肩部扩展（SAPMAC）方法生长的大型蓝宝石晶体中的热应力分布。已经建立了一个关键的缺陷模型来解释在蓝宝石生长过程中裂纹的扩展和传播。结果表明，应力场取决于生长速率，环境温度和结晶方向。高应力始终存在于生长界面附近，肩部扩展位置，拖尾位置以及直径发生急剧变化的位置。最大应力总是出现在晶种和晶体的界面处。裂纹通常在关键缺陷区域形成，并在晶体生长过程中在施加的拉应力作用下在m平面和a平面内扩展。实验结果证明，通过改进的晶体生长系统和良好控制的技术，由于不存在裂纹，可以生长出高质量的大尺寸蓝宝石晶体。

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