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Preparation and optical absorption of InAs nanocrystal- embedded thin films

机译:InAs纳米晶嵌入薄膜的制备和光吸收

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摘要

InAs-S-O_2 nanocrystal-embedded films were prepared by using ratio-frequency cosputter- ing. The growth behavior of InAs in the composite film has been studied by transmission electron mi- croscope. It has been found that with the increasing substrate temperature, InAs in the matrix under- goes transitions from an initial dispersed phase to a fractal structure of the InAs phase, then to nucle- ation, and finally to grain growth.
机译:使用比率频率共溅射制备了InAs-S-O_2纳米晶体嵌入膜。通过透射电子显微镜研究了InAs在复合膜中的生长行为。已经发现,随着衬底温度的升高,基体中的InAs将从初始分散相转变为InAs相的分形结构,然后成核,最后转变为晶粒长大。

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