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Deposition of textured diamond films on Si (100) substrates via microwave plasma chemical vapor deposition

机译:通过微波等离子体化学气相沉积在Si(100)衬底上沉积纹理化的金刚石膜

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摘要

The possibility of diamond films used as new high-temperature, high-frequency and high-power semiconductor materials is one of the most important application prospects of diamond films However, the random crystal orientation, large amounts of grain boundaries and defects of the polycrystal diamond films greatly affect the properties of the polycrystalline diamond firms and make them unsuitable in the high-quality electronic devices, so in the recent few years, many people have been devoted to the study of epitexial diamond films. In 1992, Jiang and Glass et al. successfully deposited textured diamond films by microwave plasma chemical vapor deposition (MWCVD) with bias-enhanced nucleation method on Si (001) and beta-SiC(100), respectively. This leads to an important approach to the electronic applications of diamond films. In this work, the authors deposited textured diamond films on polished Si (100) substrates by MWCVD without bias-enhanced nucleation. The samples were identified by means of scanning electron microscopy (SEM) and X-ray diffraction to be textured.
机译:金刚石膜作为高温,高频和高功率半导体新材料的可能性是金刚石膜最重要的应用前景之一。然而,多晶金刚石的随机晶体取向,大量晶界和缺陷金刚石薄膜极大地影响了多晶金刚石公司的性能,使其不适用于高质量的电子设备,因此,近年来,许多人致力于表观金刚石膜的研究。 1992年,Jiang和Glass等人。分别通过微波等离子体化学气相沉积(MWCVD)和偏压增强成核方法分别在Si(001)和β-SiC(100)上成功沉积了带纹理的金刚石膜。这导致一种重要的方法应用于金刚石薄膜的电子应用。在这项工作中,作者通过MWCVD在没有偏置增强形核的情况下,在抛光的Si(100)衬底上沉积了带纹理的金刚石膜。通过扫描电子显微镜(SEM)和X射线衍射鉴定样品是否有纹理。

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