SPLIT SINGULARITIESt STRESS FIELD NEAR THE EDGE OF A SILICON DIE ON A POLYMER SUBSTRATE

X. H. LIU; Z. SUO; Q. MA

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SPLIT SINGULARITIESt STRESS FIELD NEAR THE EDGE OF A SILICON DIE ON A POLYMER SUBSTRATE

机译：聚合物基体上硅片边缘附近的最大奇异应力场

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In current design the circuitry is extended very close to the edges of a silicon die to maximize useful surface area. When the die is bonded to a polymer substrate, with the circuitry facing the polymer, thermal misfit stress concentrates at the die edges and may damage the circuitry. The stress distribution near a die edge is quantified using a combination of asymptotic analysis and finite element calculation.

机译：在当前的设计中，电路被扩展到非常靠近硅芯片的边缘，以最大化有用的表面积。当管芯粘结到聚合物基板上时，电路面对聚合物，热失配应力会集中在管芯边缘，并可能损坏电路。使用渐近分析和有限元计算的组合来量化模具边缘附近的应力分布。

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来源
《Computer Methods in Applied Mechanics and Engineering》 |1998年第1期|p.67-76|共10页
作者
X. H. LIU; Z. SUO; Q. MA;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类自动化基础理论;工程基础科学;
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SPLIT SINGULARITIESt STRESS FIELD NEAR THE EDGE OF A SILICON DIE ON A POLYMER SUBSTRATE

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