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首页> 外文期刊>Coordination chemistry reviews >Doing chemistry on low-dimensional silicon surfaces: silicon nanowires as platforms and templates
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Doing chemistry on low-dimensional silicon surfaces: silicon nanowires as platforms and templates

机译：在低维硅表面上进行化学反应：以硅纳米线为平台和模板

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Silicon-based nanotechnology is highly promising since it is compatible with conventional silicon microtechnology. Recently, there has been considerable interest in the fabrication, characterization, and properties of semiconducting silicon nanowires (SiNWs) and silicon nanodots (SiNDs). SiNWs in the nanosize regime exhibit quantum confinement effects and are expected to play a key role as interconnection and functional components in future nanosized electronic and optical devices. The first-steps towards the fabrication of any devices are the controls of the synthesis and properties of the materials. The purpose of this review is to discuss the surface chemistries of SiNWs and SiNDs in general and the use of these low-dimensional silicon materials as platforms and templates in creating other nanomaterials in particular. We begin with a brief discussion of the differences in the properties between carbon and silicon, followed by discussions of the synthesis and characterization of SiNWs and SiNDs. We then show how SiNWs can be used as platforms in doing chemistry in the nanorealm, as exemplified by the reductive growths of metal clusters on the surfaces of SiNWs and the formation of metal films on the surfaces of SiNWs. Using SiNWs or SiNDs as templates (molds), a new method for preparing the conventional CNTs or CNOs as well as new nanostructures of hydrocarbon nanotubes (HCNTs) and nanoonions (HCNOs) was discovered. The new HCNTs and HCNOs, with interlayer spacings ranging from 3.5 to 5.9 A, can be prepared by sonicating SiNWs in common organic solvents under ambient conditions. Two related topics are also discussed. Using zeolites as quasi-templates in the production of SiNWs, ultrafine SiNWs, measuring only a few nanometers in diameter, can be synthesized. Surprisingly, these ultrafine SiNWs exhibit very strong photoluminescence. Using multi-walled carbon nanotubes (MWCNTs) as sacrificial templates, a new type of silicon carbide nanotubes (SiCNTs) can be fabricated. And finally, a brief discussion on the device aspects and other prospects of SiNWs and SiNDs in the future development of Si-based nanotechnology is presented.
机译：基于硅的纳米技术与传统的硅微技术兼容，因此前景广阔。最近，人们对半导体硅纳米线（SiNWs）和硅纳米点（SiNDs）的制造，表征和特性产生了极大的兴趣。纳米尺寸的SiNW表现出量子限制效应，并有望在未来的纳米电子和光学设备中作为互连和功能组件发挥关键作用。制造任何设备的第一步是材料合成和性能的控制。这篇综述的目的是讨论SiNWs和SiNDs的表面化学性质，以及这些低维硅材料作为平台和模板在制造其他纳米材料方面的用途。我们首先简要讨论碳和硅之间的特性差异，然后讨论SiNW和SiND的合成和表征。然后，我们展示了如何将SiNWs用作纳米领域化学过程的平台，以SiNWs表面金属簇的还原性生长和SiNWs表面金属膜的形成为例。以SiNWs或SiNDs为模板（模具），发现了一种制备常规CNTs或CNOs以及烃纳米管（HCNTs）和纳米洋葱（HCNOs）新纳米结构的新方法。新型HCNT和HCNO的层间距在3.5至5.9 A之间，可以通过在环境条件下在普通有机溶剂中超声处理SiNW来制备。还讨论了两个相关主题。使用沸石作为生产SiNW的准模板，可以合成直径仅为几纳米的超细SiNW。令人惊讶的是，这些超细SiNW表现出非常强的光致发光性。使用多壁碳纳米管（MWCNT）作为牺牲模板，可以制造新型的碳化硅纳米管（SiCNT）。最后，对SiNW和SiND的器件方面以及在基于Si的纳米技术的未来发展中的其他前景进行了简短的讨论。

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