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首页> 外文期刊>Defence Science Journal >Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques
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Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques

机译：使用电感耦合等离子体化学气相沉积和等离子体增强化学气相沉积技术的GaN / AlGaN HEMT钝化性能分析

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摘要

In the present paper SiN thin film has been studied as a passivation layer and its effect on AlGaN/GaN HEMTs is investigated using two different deposition techniques i.e PECVD and ICPCVD. AlGaN/GaN HEMTs devices passivated with optimised SiN film have delivered lower gate leakage current (from 1.1A to nA). Device source drain saturation current (I-ds) increased from 400mA/mm to similar to 550 Ahem and the peak extrinsic trans-conductance increased from 100 mS/mm to 170 mS/mm for a 0.8 mu m HEMT device. The optimised SiN passivation process has resulted in reduced current collapse and increased breakdown voltage for HEMT devices.
机译：在本文中，已经研究了SiN薄膜作为钝化层，并使用两种不同的沉积技术（即PECVD和ICPCVD）研究了其对AlGaN / GaN HEMT的影响。钝化了优化SiN膜的AlGaN / GaN HEMT器件提供了较低的栅极泄漏电流（从1.1A到nA）。对于0.8μmHEMT器件，器件源极漏极饱和电流（I-ds）从400mA / mm增加到550 Ahem，并且峰值非本征跨导从100 mS / mm增加到170 mS / mm。优化的SiN钝化工艺可减少HEMT器件的电流崩塌和击穿电压。

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