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首页> 外文期刊>Coatings >Silicon Phthalocyanines as Acceptor Candidates in Mixed Solution/Evaporation Processed Planar Heterojunction Organic Photovoltaic Devices
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Silicon Phthalocyanines as Acceptor Candidates in Mixed Solution/Evaporation Processed Planar Heterojunction Organic Photovoltaic Devices

机译：酞菁硅在混合溶液/蒸发处理的平面异质结有机光伏器件中作为受体候选物

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Silicon phthalocyanines (SiPc) are showing promise as both ternary additives and non-fullerene acceptors in organic photovoltaics (OPVs) as a result of their ease of synthesis, chemical stability and strong absorption. In this study, bis(3,4,5-trifluorophenoxy) silicon phthalocyanine ((345F) 2 -SiPc)) and bis(2,4,6-trifluorophenoxy) silicon phthalocyanine ((246F) 2 -SiPc)) are employed as acceptors in mixed solution/evaporation planar heterojunction (PHJ) devices. The donor layer, either poly(3-hexylthiophene) (P3HT) or poly[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT), was spin coated followed by the evaporation of the SiPc acceptor thin film. Several different donor/acceptor combinations were investigated in addition to investigations to determine the effect of film thickness on device performance. Finally, the effects of annealing, prior to SiPc deposition, after SiPc deposition, and during SiPc deposition were also investigated. The devices which performed the best were obtained using PCDTBT as the donor, with a 90 nm film of (345F) 2 -SiPc as the acceptor, followed by thermal annealing at 150 °C for 30 min of the entire mixed solution/evaporation device. An open-circuit voltage ( V oc) of 0.88 V and a fill factor (FF) of 0.52 were achieved leading to devices that outperformed corresponding fullerene-based PHJ devices.
机译：由于其易于合成，化学稳定性和强吸收性，硅酞菁（SiPc）在有机光伏（OPV）中作为三元添加剂和非富勒烯受体都显示出了希望。在这项研究中，使用双（3,4,5-三氟苯氧基）硅酞菁（（345F）2 -SiPc））和双（2,4,6-三氟苯氧基）硅酞菁（（246F）2 -SiPc））作为混合溶液/蒸发平面异质结（PHJ）器件中的受体。供体层为聚（3-己基噻吩）（P3HT）或聚[N-9'-十七碳烯基-2,7-咔唑-alt-5,5-（4'，7'-二-2-噻吩基-2旋涂'，1'，3'-苯并噻二唑）（PCDTBT），然后蒸发SiPc受体薄膜。除了研究以确定膜厚度对器件性能的影响外，还研究了几种不同的供体/受体组合。最后，还研究了在SiPc沉积之前，SiPc沉积之后和SiPc沉积期间进行退火的影响。使用PCDTBT作为供体，以90 nm的（345F）2 -SiPc薄膜作为受体，然后在150°C下对整个混合溶液/蒸发设备进行30分钟的热退火，获得性能最佳的设备。实现了0.88 V的开路电压（V oc）和0.52的填充系数（FF），从而导致该器件的性能优于相应的基于富勒烯的PHJ器件。

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