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Effect of Substrate Temperature on the Optical and Electrical Properties of Nitrogen-Doped NiO Thin Films

机译：衬底温度对氮掺杂NiO薄膜光学和电学性质的影响

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NiO is a widely used p-type semiconductor. The desired optical and electrical properties of NiO vary in different application fields. To modulate the properties of NiO, nitrogen (N)-doped NiO thin films were synthesized by reactive radio-frequency magnetron sputtering on ITO-coated glass substrates. The influence of substrate temperature on the properties of NiO was investigated. XRD studies indicated a cubic structure. With the increase of the substrate temperature, the average transmittance in the visible region gradually reduced from 90% to 50%. The bandgap energy narrowed from 3.5 to 3.08 eV. The intensity of the PL spectra weakened, and the electrical conductivity rose. Overall, changing the substrate temperature is an effective method to modulate the optical and electrical properties of N-doped NiO thin films.
机译：NiO是广泛使用的p型半导体。 NiO所需的光学和电学性质在不同的应用领域中会有所不同。为了调节NiO的性质，通过反应性射频磁控溅射在涂有ITO的玻璃基板上合成了掺氮（N）的NiO薄膜。研究了衬底温度对NiO性能的影响。 XRD研究表明是立方结构。随着基板温度的升高，可见光区域的平均透射率从90％逐渐降低到50％。带隙能量从3.5缩小到3.08 eV。 PL光谱的强度减弱，电导率上升。总体而言，改变衬底温度是调节N掺杂NiO薄膜的光学和电学性质的有效方法。

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