Dopant-induced local electric fields and their influence on the band-edge absorption of GaN are theoretically examined. For dopant-induced electric field distribution, it is derived with Bayes’ rule. For the average electric field strength, it is revealed to be quite strong, i.e., in an order of 104 V/cm in GaN with a fairly low dopant density. On the basis of the Franz–Keldysh mechanism, influence of the dopant-induced electric fields on the band-edge absorption coefficient of GaN is then investigated. Without any adjustable parameters, absorption coefficients of GaN are computed and in good agreement with the available experimental values.
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机译：理论上研究了掺杂剂引起的局部电场及其对GaN的带边吸收的影响。对于掺杂物引起的电场分布，它是根据贝叶斯定律得出的。对于平均电场强度，显示出相当强的强度，即，在具有相当低的掺杂剂密度的GaN中约为104 V / cm。基于Franz–Keldysh机理，然后研究了掺杂剂诱导的电场对GaN的带边吸收系数的影响。没有任何可调整的参数，将计算GaN的吸收系数，并与可用的实验值高度吻合。
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