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首页> 外文期刊>ACS Omega >Mechanism of Light-Soaking Effect in Inverted Polymer Solar Cells with Open-Circuit Voltage Increase
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Mechanism of Light-Soaking Effect in Inverted Polymer Solar Cells with Open-Circuit Voltage Increase

机译：开路电压升高的倒置聚合物太阳能电池的均光效应机理

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In this study, we present novel insights into the light-soaking effect of inverted polymer solar cells (PSCs), where the open-circuit voltage (V _(oc)) of the cells improves over time under light irradiation. The effect was investigated by electron spin resonance (ESR) studies of bare indium tin oxide (ITO) and piperazine derivative-modified ITO/regioregular poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C_(61) butyric acid methyl ester (PCBM) substrates. These results were combined with alternating current impedance spectroscopy (IS) measurements of inverted PSCs based on the above substrates. In ESR experiments with the substrates under white light irradiation, with a UV light component, many P3HT~(?+) radical cations were observed in the bare-ITO/P3HT:PCBM substrate. The number of radical cations was considerably suppressed in the ITO/P3HT:PCBM substrates with ITO modified by piperazine derivatives. This is because adsorbed oxygen molecules on the ITO acted as acceptor dopants for photoexcited P3HT, and the amount of adsorbed oxygen was decreased by modifying the ITO with piperazine derivatives. In IS measurements of the inverted PSCs under white light irradiation, a decrease in the electric capacitance (CPE2) of an electric double layer formed at the ITO/P3HT:PCBM interface was observed. A strong correlation was observed between the decrease of CPE2 and the increase of V _(oc). From these results, the light-soaking behavior was attributed to the removal of an electron injection barrier formed between ITO and PCBM, under white light irradiation.
机译：在这项研究中，我们提出了对倒置聚合物太阳能电池（PSC）的吸光效果的新见解，其中，在光照下，电池的开路电压（iV _（oc））随着时间的推移而提高。通过电子自旋共振（ESR）研究裸氧化铟锡（ITO）和哌嗪衍生物改性的ITO /区域规则的聚（3-己基噻吩）（P3HT）：[6,6]-苯基C_（61）丁酸酸性甲酯（PCBM）底物。这些结果与基于上述基板的反向PSC的交流阻抗谱（IS）测量相结合。在具有紫外线成分的白光照射下的基板的ESR实验中，在裸ITO / P3HT：PCBM基板中观察到许多P3HT〜（α+）自由基阳离子。在用哌嗪衍生物改性的ITO的ITO / P3HT：PCBM基材中，自由基阳离子的数量得到了显着抑制。这是因为ITO上吸附的氧分子充当了光激发P3HT的受体掺杂剂，并且通过用哌嗪衍生物改性ITO减少了氧的吸附量。在白光照射下倒置PSC的IS测量中，观察到在ITO / P3HT：PCBM界面处形成的双电层的电容（CPE2）减小。观察到CPE2的减少与V_（oc）的增加之间有很强的相关性。根据这些结果，光吸收行为归因于在白光照射下去除了在ITO和PCBM之间形成的电子注入势垒。

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