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首页> 外文期刊>ACS Omega >Room-Temperature Routes Toward the Creation of Zinc Oxide Films from Molecular Precursors
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Room-Temperature Routes Toward the Creation of Zinc Oxide Films from Molecular Precursors

机译：由分子前体产生氧化锌薄膜的室温途径

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The fabrication of “flexible” electronics on plastic substrates with low melting points requires the development of thin-film deposition techniques that operate at low temperatures. This is easily achieved with vacuum- or solution-processed molecular or polymeric semiconductors, but oxide materials remain a significant challenge. Here, we show that zinc oxide (ZnO) can be prepared using only room-temperature processes, with the molecular thin-film precursor zinc phthalocyanine (ZnPc), followed by UV-light treatment in vacuum to elicit degradation of the organic components and transformation of the deposited film to the oxide material. The degradation mechanism was assessed by studying the influence of the atmosphere during the reaction: it was particularly sensitive to the oxygen pressure in the chamber and optimal degradation conditions were established as 3 mbar with 40% oxygen in nitrogen. The morphology of the film remained relatively unchanged during the reaction, but a detailed analysis of its composition using both scanning transmission electron microscopy and secondary ion mass spectrometry revealed that a 40 nm thick layer containing ZnO results from the 100 nm thick precursor after complete reaction. Our methodology represents a simple route for the fabrication of oxides and multilayer structures that can be easily integrated into current molecular thin-film growth setups, without the need for a high-temperature step.
机译：在具有低熔点的塑料基板上制造“柔性”电子产品需要开发在低温下运行的薄膜沉积技术。使用真空或溶液处理的分子或聚合物半导体很容易实现这一点，但是氧化物材料仍然是一个巨大的挑战。在这里，我们表明，仅使用室温过程即可制备氧化锌（ZnO），并使用分子薄膜前体锌酞菁（ZnPc），然后在真空中进行UV光处理以引起有机成分的降解和转化。沉积膜与氧化物材料的距离。通过研究反应过程中气氛的影响来评估降解机理：它对反应室内的氧气压力特别敏感，并且最佳的降解条件为3 mbar，氮气中含40％的氧气。反应期间膜的形态保持相对不变，但是使用扫描透射电子显微镜和二次离子质谱对膜的组成进行详细分析后发现，完全反应后，由100 nm厚的前驱物可形成40 nm厚的ZnO层。我们的方法论代表了制造氧化物和多层结构的简单方法，可以轻松地将它们集成到当前的分子薄膜生长装置中，而无需高温步骤。

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