Model of High-Temperature Diffusion of Interstitial Silicon Atoms in Silicon | Science Publications

A. R. Chelyadinskii; M. Jadan; V. Y. Yavid

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Model of High-Temperature Diffusion of Interstitial Silicon Atoms in Silicon | Science Publications

机译：硅中间隙硅原子的高温扩散模型科学出版物

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> Problem statement: Correct description of the anomalous phenomena determined by self-point defects in implanted silicon desires knowledge of their properties. Interstitial Si atoms themselves display anomalies in their behavior and firstly in existence of two very different values of the diffusion coefficient. Approach: We analyzed experimental results and proposed the model of diffusion of interstitial Si atoms in silicon in two shapes. Results: At low saturation Si atoms diffuse as isolated atoms with a low diffusion coefficient (~10-12 cm2 sec-1 at 900

机译： > 问题陈述：正确描述由注入的硅中的自点缺陷确定的异常现象，需要了解其特性。间隙Si原子本身在其行为方面显示出异常，首先是存在两个非常不同的扩散系数值。方法：我们对实验结果进行了分析，并提出了间隙硅原子在硅中以两种形状扩散的模型。结果：在低饱和度下，硅原子作为低原子的孤立原子而扩散扩散系数（〜10 -12 cm 2 sec -1 在900

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《American journal of applied sciences》 |2009年第6期|共页
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A. R. Chelyadinskii; M. Jadan; V. Y. Yavid;
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1. Displacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and Annealing | Science Publications [J] . A. R. Chelyadinskii, M. Jadan, V. Y. Yavid American journal of applied sciences . 2005,第5期

机译：在注入和退火过程中，间隙硅原子从硅晶体节点置换硼科学出版物
2. Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates [J] . Velichko O.I., Kavaliova A.P. Physica, B. Condensed Matter . 2012,第12期

机译：硅衬底低温退火过程中注入原子瞬态间隙扩散的建模
3. High-temperature interstitial oxygen diffusion retardation in epitaxial-layered heavily arsenic- or boron-doped Czochralski silicon wafers [J] . Q. Wang, Ihsiu Ho Applied Physics Letters . 2006,第15期

机译：外延层重掺砷或掺硼的切克劳斯基硅片中的高温间隙氧扩散延迟
4. Comparative Analysis of Process of Diffusion of Interstitial Oxygen Atoms and Interstitial Hydrogen Molecules in Silicon and Germanium Crystals: Quantumchemical Simulation [C] . Vasilii Gusakov Symposium on Semiconductor Defect Engineering . 2007

机译：硅和锗晶体间质氧原子和间质氢分子扩散过程的比较分析：量子化学模拟
5. Determination and modeling of the interaction between arsenic and silicon interstitials in silicon. [D] . Brindos, Richard Eugene. 2001

机译：硅中砷与硅间隙物之间相互作用的确定和建模。
6. Quantum simulation of the Hubbard model with dopant atoms in silicon [O] . J. Salfi, J. A. Mol, R. Rahman, -1

机译：硅中掺杂原子的哈伯德模型的量子模拟
7. Model of High-Temperature Diffusion of Interstitial Silicon Atoms in Silicon [O] . M. Jadan, A. R. Chelyadinskii, V. Y. Yavid 2009

机译：硅中间隙硅原子的高温扩散模型
8. Comparison of Silicon-Atom Diffusion on the Dimer-Adatom-Stacking fault andBinnig et al. Models of the Reconstructed Si(111)-(7x7) Surface [R] . Agrawal, P. M., Thompson, D. L., Raff, L. M. 1991

机译：硅 - 原子扩散在Dimer-adatom-stacking断层上的比较和Binnig等。重建si（111） - （7x7）表面的模型

Model of High-Temperature Diffusion of Interstitial Silicon Atoms in Silicon | Science Publications

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