Towards an optical switching of memory effect in Au/TiO 2 /ITO/ZnO:Al/p-Si heterostructure based on nanoparticles

M. Nouiri; K. Djessas; L. El Mir

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Towards an optical switching of memory effect in Au/TiO 2 /ITO/ZnO:Al/p-Si heterostructure based on nanoparticles

机译：基于纳米颗粒的Au / TiO 2 / ITO / ZnO：Al / p-Si异质结构中存储效应的光学转换

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We have successfully realized a nonvolatile resistive memory structure by rf-magnetron sputtering technique using nanoparticles synthesized by sol–gel method. The resistive switching (RS) related to the Au/TiO2 Schottky contact was grafted on a photosensitive structure ITO/ZnO:Al/p-Si allowing memory effect switching optically activated. The RS takes place via tunneling path through potential barrier located at the Au/TiO2 interface. The memory effect persists under illumination and the Arrhenius plot of the surface of the V–I cycle shows an activation energy of about 160?meV in dark and 100?meV under visible illumination. This behavior of the RS optically activated is closely related to the electronic states in the Au/TiO2 interface which leads to perform an optical switching of the memory effect with the presented structure.

机译：我们已经通过射频磁控溅射技术成功地实现了非易失性电阻存储结构，该技术使用了溶胶-凝胶法合成的纳米粒子。与Au / TiO2肖特基接触有关的电阻开关（RS）接枝在光敏结构ITO / ZnO：Al / p-Si上，从而可以光学激活存储效应开关。 RS通过穿过位于Au / TiO 2界面处的势垒的隧穿路径发生。记忆效应在光照下仍然存在，V–I循环表面的Arrhenius曲线显示，在黑暗中激活能量约为160µmeV，在可见光照下约为100µmeV。光学激活的RS的这种行为与Au / TiO2界面中的电子状态密切相关，这导致使用所提出的结构执行存储效应的光学切换。

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《Applied Nanoscience》 |2018年第8期|共7页
作者
M. Nouiri; K. Djessas; L. El Mir;
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中图分类物理学;
关键词
Sol–gelResistive switchingMemory effectNanoparticles;

机译：溶胶-凝胶电阻切换记忆效应纳米粒子;

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1. Highlighting the Au/TiO_2 role in the memory effect of Au/TiO_2/ITO/ ZnO:AI/p-Si heterostructure [J] . Mourad Nouiri, Aicha Guefreche, Kamal Djessas, Journal of materials science . 2020,第9期

机译：在AU / TiO_2 / ITO / ZnO的记忆效应中突出显示AU / TiO_2的作用：AI / P-Si异质结构
2. Study of TiO_2/ITO/ZnO:Al/p-Si photo-sensitive structure based on nanoparticles [J] . Nouiri Mourad, Ayadi Z. Ben, Djessas Kamal, Journal of materials science . 2017,第18期

机译：基于纳米粒子的TiO_2 / ITO / ZnO：Al / p-Si光敏结构的研究
3. Effect of Impedance Relaxation in Conductance Mechanisms in TiO2/ITO/ZnO:Al/p-Si Heterostructure [J] . Nouiri M., El Mir L. Journal of Electronic Materials . 2018,第5期

机译：TiO2 / ITO / ZnO / ZnO：Al / P-Si异质结构电导机制中阻抗弛豫的影响
4. Au Nanoparticles Dispersed Inside Porous TiO_2 Thin Films: High Performance Optical Gas Sensors Through Localized Surface Plasmon Resonance Monitoring [C] . Enrico Della Gaspera, Alessandro Martucci International Meeting on Chemical Sensors . 2012

机译：Au纳米颗粒分散在多孔TiO_2薄膜内：通过局部表面等离子体共振监测的高性能光学气体传感器
5. Structural, Optical and Photo-Electrochemical Properties of H:TiO2 Nanoparticle, TiO2-MoS2 Nanocomposite and TiO2-BiVo4 Core-Shell Nanoparticle Structures [D] . Mehta, Manan. 2020

机译：H：TiO2纳米粒子，TiO2-MOS2纳米复合材料和TiO2-BIVO4核心壳纳米粒子结构的结构，光学和光电化学性质
6. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si-ZnO heterostructure revealed by in-situ TEM [O] . Lei Zhang, Liang Zhu, Xiaomei Li, -1

机译：基于TEM的p + -Si / n-ZnO异质结构的单二极管一电阻存储器中的电阻切换机制
7. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM [O] . Lei Zhang, Liang Zhu, Xiaomei Li, 2017

机译：基于P + -SI / N-ZnO异质结构的一种二极管 - 一个电阻存储器的电阻切换机构，由原位TEM透露

Towards an optical switching of memory effect in Au/TiO 2 /ITO/ZnO:Al/p-Si heterostructure based on nanoparticles

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