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Optical and Transport Properties of Ni-MoS 2

机译：Ni-MoS 2的光学和传输性质

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In this paper, MoS 2 and Ni-MoS 2 crystal layers were fabricated by the chemical vapor transport method with iodine as the transport agent. Two direct band edge transitions of excitons at 1.9 and 2.1 eV were observed successfully for both MoS 2 and Ni-MoS 2 samples using temperature-dependent optical reflectance (R) measurement. Hall effect measurements were carried out to analyze the transport behavior of carriers in MoS 2 and Ni-MoS 2 , which indicate that the Ni-MoS 2 sample is n -type and has a higher resistance and lower mobility than the MoS 2 sample has. A photoconductivity spectrum was performed which shows an additional Ni doping level existing at 1.2 eV and a higher photocurrent generating only for Ni-MoS 2 . The differences between MoS 2 and Ni-MoS 2 could be attributed to the effect of Ni atoms causing small lattice imperfections to form trap states around 1.2 eV. The temperature-dependent conductivity shows the presence of two shallow levels with activation energies (84 and 6.7 meV in MoS 2 ; 57 and 6.5 meV in Ni-MoS 2 ). Therefore, the Ni doping level leads to high resistance, low mobility and small activation energies. A series of experimental results could provide useful guidance for the fabrication of optoelectronic devices using MoS 2 structures.
机译：本文以碘为传输剂，通过化学气相传输法制备了MoS 2和Ni-MoS 2晶体层。使用温度相关的光学反射率（R）测量，对于MoS 2和Ni-MoS 2样品，成功地观察到了激子在1.9和2.1 eV处的两个直接带边缘跃迁。进行霍尔效应测量以分析载流子在MoS 2和Ni-MoS 2中的传输行为，这表明Ni-MoS 2样品为n型且比MoS 2样品具有更高的电阻和更低的迁移率。进行了光电导光谱，其显示出在1.2eV处存在额外的Ni掺杂水平和仅对于Ni-MoS 2产生更高的光电流。 MoS 2和Ni-MoS 2之间的差异可能归因于Ni原子的作用，导致小的晶格缺陷形成了约1.2 eV的陷阱态。随温度变化的电导率表明存在两个具有激活能的浅能级（在MoS 2中为84和6.7 meV;在Ni-MoS 2中为57和6.5 meV）。因此，Ni掺杂水平导致高电阻，低迁移率和小的活化能。一系列实验结果可以为使用MoS 2结构的光电器件的制造提供有用的指导。

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