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A current-source concept for fast and efficient driving of silicon carbide transistors

机译：快速有效地驱动碳化硅晶体管的电流源概念

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The paper discusses the application of the current-source concept in the gate drivers for silicon carbide transistors. There is a common expectation that all SiC devices will be switched very fast in order to reach very low values of switching energies. This may be achieved with the use of suitable gate drivers and one of possibilities is a solution with the current source. The basic idea is to store energy in magnetic field of a small inductor and then release it to generate the current peak of the gate current. The paper describes principles of the current-source driver as well as various aspects of practical implementation. Then, the switching performance of the driven SiC transistors is illustrated by double-pulse test results of the normally-ON and normally-OFF JFETs. Other issues such as problem of the drain-gate capacitance and power consumption are also discussed on the base of experimental results. All presented results show that the currentsource concept is an interesting option to fast and efficient driving of SiC transistors.
机译：本文讨论了电流源概念在碳化硅晶体管栅极驱动器中的应用。人们普遍期望所有SiC器件的开关速度都非常快，以达到非常低的开关能量值。这可以通过使用合适的栅极驱动器来实现，一种可能性是使用电流源的解决方案。基本思想是将能量存储在小型电感器的磁场中，然后释放该能量以产生栅极电流的电流峰值。本文介绍了电流源驱动程序的原理以及实际实现的各个方面。然后，通过常开和常关JFET的双脉冲测试结果来说明被驱动SiC晶体管的开关性能。在实验结果的基础上，还讨论了其他问题，例如漏栅电容和功耗问题。所有呈现的结果表明，电流源概念是快速有效地驱动SiC晶体管的有趣选择。

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