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首页> 外文期刊>International Journal of Electrochemical Science >Improving the Rate Performance of Manganese Dioxide by Doping with Cu2+, Co2+ and Ni2+ ions
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Improving the Rate Performance of Manganese Dioxide by Doping with Cu2+, Co2+ and Ni2+ ions

机译：通过掺杂Cu 2 + ，Co 2 + 和Ni 2 + 离子提高二氧化锰的速率性能

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摘要

Metal-doped MnO 2 has been successfully synthesized via chemical precipitation method. Interestingly,doping can increase not only ion conductivity but also intrinsic electron conductivity. By doping, theparticle size of MnO 2 decreases, relatively appropriate pore size distribution is obtained, and physicallyand chemically bound water content increases, all of which contribute to ion conductivity. Meanwhile,doping has induced some defects in MnO 2 crystal, increasing the hole concentration and then intrinsicelectron conductivity. As the result, metal–doped MnO 2 displays better rate performance than the un–doped. Especially, nickel–doped MnO 2 exhibits the best rate behavior. Even at 8 A g -1 , nickel–dopedMnO 2 still has a specific capacitance as high as 234.0 F g -1 , larger than that of the un–doped obtained at1 A g -1 (only 173.6 F g -1 ). In conclusion, doping is a useful way for improving the rate performance ofMnO 2 .
机译：通过化学沉淀法已成功合成了金属掺杂的MnO 2。有趣的是，掺杂不仅可以提高离子电导率，而且还可以提高本征电子电导率。通过掺杂，MnO 2的粒径减小，获得相对合适的孔径分布，并且物理和化学结合的水含量增加，所有这些都有助于离子导电性。同时，掺杂在MnO 2晶体中引起了一些缺陷，从而增加了空穴浓度，进而增加了固有电子传导率。结果，金属掺杂的MnO 2显示出比未掺杂更好的速率性能。特别是，掺杂镍的MnO 2表现出最佳的速率特性。即使在8 A g -1时，掺镍的MnO 2的比电容仍高达234.0 F g -1，比在1 A g -1时获得的未掺杂的电容（只有173.6 F g -1）更大。总之，掺杂是改善MnO 2倍率性能的有用方法。

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