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首页> 外文期刊>International Journal of Electrochemical Science >Germanium Growth in Low Dimensions Based on Relaxed-Porous Silicon by Using A Simple Way of Electrochemical Deposition
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Germanium Growth in Low Dimensions Based on Relaxed-Porous Silicon by Using A Simple Way of Electrochemical Deposition

机译：通过简单的电化学沉积方法，基于弛豫多孔硅的低尺寸锗生长

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摘要

Porous silicon (PS) technology was used to grow Ge micro-flower on the surface of Si substrates withrough morphology. Low dimensions nanorods were also fabricated directly on the Si substratesthrough Ge deposition using a simple and low-cost of electrodeposition method for comparison. Thecharacteristics of low dimensions nanorods were investigated for both substrates PS and Si usingscanning electron microscopy (SEM), EDX, grazing-angle X-ray diffraction (XRD), and Ramanspectra measurements of nanostructures grown on both PS and Si substrate. The texture obtained fromSEM images showed that the nanorods were covered by micro-flowers and highly oriented on theporous silicon substrate. Furthermore, the length of nanorods on porous silicon decreased from 10mto 200 nm and the diameter from 50000 nm to100 nm. Ge lattice parameters and crystallite sizegrown on PS and Si were calculated from X-ray diffractograms. It was found that the Ge structures forPS and Si were polycrystalline with a cubic system, whilst the elastic strain on PS was lower than Sisubstrate. This indicates that Ge on porous lattice is more relax than on silicon. The Raman spectrashowed that Ge structure shifted slightly towards to the upper frequency compared with bulk Ge.
机译：采用多孔硅（PS）技术在形态粗糙的Si衬底表面上生长Ge微花。还使用一种简单而低成本的电沉积方法通过Ge沉积法在Si衬底上直接制造了低尺寸纳米棒。使用扫描电子显微镜（SEM），EDX，掠角X射线衍射（XRD）以及在PS和Si衬底上生长的纳米结构的拉曼光谱测量，研究了衬底PS和Si的低尺寸纳米棒的特性。从SEM图像获得的织构表明纳米棒被微花覆盖并且在多孔硅基底上高度取向。此外，多孔硅上的纳米棒的长度从10m减小到200nm，直径从50000nm减小到100nm。从X射线衍射图计算出PS和Si上的Ge晶格参数和微晶尺寸。发现PS和Si的Ge结构是立方晶系的多晶，而PS上的弹性应变低于Si衬底。这表明多孔晶格上的Ge比硅上的Ge更松弛。拉曼光谱表明，与块状Ge相比，Ge的结构向高频方向略有偏移。

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