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Electrochemically Grown Cadmium(II) Selenide Nanowires Coated by Au Nanoparticles: Photocatalytic Properties

机译:金纳米粒子包覆的电化学生长硒化镉纳米线的光催化性能

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The control of the nanoparticles coating on the semiconductor nanowires and the photocatalyticprocesses can help to understand the importance for the potential application of nanostructures asphotocatalysts. Here, Au nanoparticles-coated CdSe nanowires were successfully grown on indium tinoxide conducting glass substrate using a rapid electrochemically technique. The field-emission scanningelectron microscopy image indicates a high-density array of CdSe nanowires in vertical alignment withan average diameter of <40 nm. A weak Au diffraction peak appeared in X-ray diffraction which confirmAu nanoparticles were coated on CdSe nanowires. UV–vis absorption spectra show the maximumabsorption of Au coated CdSe nanowires is at 380 nm. The CdSe and Au coated CdSe nanowires wereirradiated with UV light of 365 nm and the results of the photodegradation of Rhodamine B dye (RhB)were obtained. The results show 93.2% of RhB dye is degraded using the Au-coated CdSe nanowiresafter UV irradiation during 150 min, and the degradation rate of Au-CdSe nanowires is obtained to be0.014 min ?1 .
机译:控制在半导体纳米线上的纳米颗粒涂层和光催化过程可以帮助理解对于纳米结构作为光催化剂的潜在应用的重要性。在这里,使用快速电化学技术成功地在铟锡氧化物导电玻璃基板上生长了Au纳米颗粒包覆的CdSe纳米线。场发射扫描电子显微镜图像显示了垂直排列的CdSe纳米线的高密度阵列,平均直径小于40 nm。在X射线衍射中出现了弱的Au衍射峰,这证实了Au纳米颗粒被涂覆在CdSe纳米线上。紫外可见吸收光谱表明,Au包覆的CdSe纳米线的最大吸收在380 nm。用365nm的紫外光照射CdSe和Au包被的CdSe纳米线,得到了若丹明B染料(RhB)的光降解结果。结果表明,在150分钟的紫外线照射下,Au包覆的CdSe纳米线降解了93.2%的RhB染料,Au-CdSe纳米线的降解速率为0.014 min?1。

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