Investigation of structural properties of layered III-nitride semiconductor materials by high resolution X-rays diffraction

S. Ndiaye; A. Dioum; P. D. Tall; K. Bejtka; M. Laugt; H. P. D. Schenk; A. C. Beye

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Investigation of structural properties of layered III-nitride semiconductor materials by high resolution X-rays diffraction

机译：层状III族氮化物半导体材料的高分辨率X射线衍射研究

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High resolution X-ray diffraction (HRXRD) was used to investigate the structural properties of group III-nitride semiconductors, and was shown to give separable information on crystalline quality as well as on chemical composition, residual stresses, etc. Contributions from the various structural parameters to the HRXRD diagram profile, although mixed to each other, have been sorted out. Through the examples of GaN/InxAl1-xN/GaN heterostructures and AlxGa1-xN/GaN superlattices (SLs), grown by metal-organic chemical vapour deposition, it has been shown that all the structural parameters of III-nitrides are deducible from HRXRD combined with simulation methods.

机译：高分辨率X射线衍射（HRXRD）用于研究III族氮化物半导体的结构特性，并显示出有关晶体质量，化学成分，残余应力等的可分离信息。各种结构的贡献尽管已将HRXRD图表配置文件中的参数相互混合，但它们仍已被选出。通过金属有机化学气相沉积生长的GaN / InxAl1-xN / GaN异质结构和AlxGa1-xN / GaN超晶格（SLs）的例子，表明III-氮化物的所有结构参数均可从HRXRD组合推导出与模拟方法。

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《International Journal of Physical Sciences》 |2012年第10期|共8页
作者
S. Ndiaye; A. Dioum; P. D. Tall; K. Bejtka; M. Laugt; H. P. D. Schenk; A. C. Beye;
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中图分类物理学;
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X-ray diffractionheterostructuresuperlatticeIII-nitridelattice parameterrelaxation state.;

机译：X射线衍射异质结构超晶格III-氮化物晶格弛豫状态。;

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Investigation of structural properties of layered III-nitride semiconductor materials by high resolution X-rays diffraction

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