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首页> 外文期刊>IUCrJ >Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys
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Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys

机译：完全补偿的亚铁磁性无自旋间隙半导体FeMnGa / Al / In Half Heusler合金的预测

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摘要

Materials with full spin polarization that exhibit zero net magnetization attract great scientific interest because of their potential applications in spintronics. Here, the structural, magnetic and electronic properties of a C1b-ordered FeMnGa alloy are reported using first-principles calculations. The results indicate that the corresponding band structure exhibits a considerable gap in one of the spin channels and a zero gap in the other thus allowing for high mobility of fully spin-polarized carriers. The localized magnetic moments of Fe and Mn atoms have an antiparallel arrangement leading to fully compensated ferrimagnetism, which possesses broken magnetic inversion symmetry. Such magnetic systems do not produce dipole fields and are extremely stable against external magnetic fields. Therefore, this will improve the performance of spintronic devices. Using this principle, similar band dispersion and compensated magnetic moments were predicted in a C1b-ordered FeMnAl0.5In0.5 Heusler alloy.
机译：具有完全自旋极化且净磁化为零的材料因其在自旋电子学中的潜在应用而引起了极大的科学兴趣。在此，使用第一性原理计算报告了Cbb级FeMnGa合金的结构，磁性和电子性质。结果表明，相应的能带结构在一个自旋通道中显示出相当大的间隙，而在另一个自旋通道中显示出零间隙，因此允许完全自旋极化的载流子具有高迁移率。 Fe和Mn原子的局部磁矩具有反平行排列，从而导致完全补偿的亚铁磁，该铁磁具有破碎的磁反转对称性。这样的磁性系统不会产生偶极场，并且对于外部磁场非常稳定。因此，这将改善自旋电子器件的性能。使用此原理，可以预测在C1b级FeMnAl0.5In0.5 Heusler合金中具有相似的能带色散和补偿的磁矩。

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