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首页> 外文期刊>Nanoscale Research Letters >Cross-Sectional Investigations on Epitaxial Silicon Solar Cells by Kelvin and Conducting Probe Atomic Force Microscopy: Effect of Illumination
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Cross-Sectional Investigations on Epitaxial Silicon Solar Cells by Kelvin and Conducting Probe Atomic Force Microscopy: Effect of Illumination

机译：开尔文和导电探针原子力显微镜对外延硅太阳能电池的横断面研究：照明的影响

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摘要

Both surface photovoltage and photocurrent enable to assess the effect of visible light illumination on the electrical behavior of a solar cell. We report on photovoltage and photocurrent measurements with nanometer scale resolution performed on the cross section of an epitaxial crystalline silicon solar cell, using respectively Kelvin probe force microscopy and conducting probe atomic force microscopy. Even though two different setups are used, the scans were performed on locations within 100-μm distance in order to compare data from the same area and provide a consistent interpretation. In both measurements, modifications under illumination are observed in accordance with the theory of PIN junctions. Moreover, an unintentional doping during the deposition of the epitaxial silicon intrinsic layer in the solar cell is suggested from the comparison between photovoltage and photocurrent measurements.
机译：表面光电压和光电流都能够评估可见光照明对太阳能电池电性能的影响。我们分别使用开尔文探针力显微镜和导电探针原子力显微镜对在外延晶体硅太阳能电池截面上进行的纳米级分辨率的光电压和光电流测量进行了报告。即使使用了两种不同的设置，也要在100μm距离内的位置执行扫描，以便比较来自同一区域的数据并提供一致的解释。在两种测量中，根据PIN结的理论观察到在光照下的变化。此外，从光电压和光电流测量之间的比较提出了在太阳能电池中外延硅本征层的沉积过程中的无意掺杂。

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