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首页> 外文期刊>Nanoscience and Nanoengineering >Fabrication of Nanostructured Objects by Thermal Vacuum Deposition of Ge Films onto (100)GaAs Substrates
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Fabrication of Nanostructured Objects by Thermal Vacuum Deposition of Ge Films onto (100)GaAs Substrates

机译：通过在（100）GaAs衬底上热真空沉积Ge膜来制备纳米结构物体

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The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light scattering. The most probable size of the nanocrystallites forming the films decreases monotonically with decreasing their thickness. And raise of the deposition temperature results in their enlargement. Electro conductivity of such films proves to be high enough (resistivity of 1-10 Ohm cm at room temperature) and has character of variable range hopping conduction of the Mott's type. The hops, presumably, take place through the localized states connected with the grain boundaries.
机译：将Ge热真空沉积到GaAs衬底上的技术已用于获得纳米晶Ge膜。薄膜的纳米晶特征通过其表面的原子力显微镜检查和拉曼光散射数据得以证实。形成膜的纳米晶体的最可能尺寸随着其厚度的减小而单调减小。并且沉积温度的升高导致其增大。这种膜的电导率被证明足够高（室温下的电阻率为1-10 Ohm cm），并且具有可变的Mott型跳变传导特性。跳跃可能是通过与晶界有关的局部状态发生的。

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