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首页> 外文期刊>New journal of physics >First-principles approach to the dynamic magnetoelectric couplings for the non-reciprocal directional dichroism in BiFeO3 *
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First-principles approach to the dynamic magnetoelectric couplings for the non-reciprocal directional dichroism in BiFeO3 *

机译:BiFeO3中不可逆方向二向色性的动态磁电耦合的第一原理方法*

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Due to the complicated magnetic and crystallographic structures of BiFeO3, its magnetoelectric (ME) couplings and microscopic model Hamiltonian remain poorly understood. By employing a first-principles approach, we uncover all possible ME couplings associated with the spin-current (SC) and exchange-striction (ES) polarizations, and construct an appropriate Hamiltonian for the long-range spin-cycloid in BiFeO3. First-principles calculations are used to understand the microscopic origins of the ME couplings. We find that inversion symmetries broken by ferroelectric and antiferroelectric distortions induce the SC and the ES polarizations, which cooperatively produce the dynamic ME effects in BiFeO3. A model motivated by first principles reproduces the absorption difference of counter-propagating light beams called non-reciprocal directional dichroism. The current paper focuses on the spin-driven (SD) polarizations produced by a dynamic electric field, i.e. the dynamic ME couplings. Due to the inertial properties of Fe, the dynamic SD polarizations differ significantly from the static SD polarizations. Our systematic approach can be generally applied to any multiferroic material, laying the foundation for revealing hidden ME couplings on the atomic scale and for exploiting optical ME effects in the next generation of technological devices such as optical diodes.
机译:由于BiFeO3的复杂的磁和晶体结构,其磁电(ME)耦合和微观模型哈密顿量仍然知之甚少。通过采用第一原理方法,我们发现了与自旋电流(SC)和交换限制(ES)极化相关的所有可能的ME耦合,并为BiFeO3中的远距离自旋摆线构造了合适的哈密顿量。第一性原理计算用于了解ME联轴器的微观起源。我们发现,被铁电和反铁电畸变破坏的反对称性会诱发SC和ES极化,从而共同在BiFeO3中产生动态ME效应。由第一原理激发的模型再现了反向传播的光束的吸收差异,称为非双向定向二向色性。当前的论文集中在由动态电场即动态ME耦合产生的自旋驱动(SD)极化上。由于Fe的惯性,动态SD极化与静态SD极化明显不同。我们的系统方法通常可以应用于任何多铁性材料,为揭示原子尺度上隐藏的ME耦合以及在下一代技术设备(如光电二极管)中利用光学ME效应奠定基础。

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