Mid-infrared Sensors with InAs/GaSb Superlattice Absorption Layers Grown on InP Substrates

Kohei MIURA; Yasuhiro IGUCHI; Tsukuru KATSUYAMA; Yuichi KAWAMURA

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Mid-infrared Sensors with InAs/GaSb Superlattice Absorption Layers Grown on InP Substrates

机译：InP衬底上生长有InAs / GaSb超晶格吸收层的中红外传感器

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Type-II InAs/GaSb superlattices (SLs), which are attractive for the absorption layers of mid-infrared sensors, are usually grown on GaSb substrates. However, since GaSb substrates absorb infrared light, other substrates with high transparency are favorable for back-illuminated sensors. We have focused on InP substrates with high transparency and relatively small lattice mismatch to GaSb. The crystallographic and optical properties of SLs have been improved as the GaSb buffer layer thickness increases due to the reduction of threading dislocations. We have successfully fabricated sensors with the cutoff wavelength of 6.5 μm using InAs/GaSb SL absorption layers grown on InP substrates for the first time.

机译：通常在GaSb衬底上生长对中红外传感器的吸收层具有吸引力的II型InAs / GaSb超晶格（SL）。但是，由于GaSb衬底吸收红外光，因此其他具有高透明度的衬底对于背照式传感器是有利的。我们专注于InP衬底，该衬底具有高透明度且与GaSb的晶格失配相对较小。随着GaSb缓冲层厚度的增加，由于螺纹位错的减少，SL的晶体学和光学性能得到了改善。我们首次使用在InP衬底上生长的InAs / GaSb SL吸收层成功制造了截止波长为6.5μm的传感器。

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《SEI Technical Review》 |2014年第78期|共5页
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Kohei MIURA; Yasuhiro IGUCHI; Tsukuru KATSUYAMA; Yuichi KAWAMURA;
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1. Mid-infrared Sensors with InAs/GaSb Superlattice Absorption Layers Grown on InP Substrates [J] . Kohei MIURA, Yasuhiro IGUCHI, Tsukuru KATSUYAMA, SEI Technical Review . 2014,第78期

机译：在InP衬底上生长具有InAs / GaSb超晶格吸收层的中红外传感器
2. Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate [J] . E Plis, J B Rodriguez, G Balakrishnan, Semiconductor science and technology . 2010,第8期

机译：在GaAs衬底上生长nbn设计的中红外InAs / GaSb应变层超晶格探测器
3. InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates [J] . Klaudia Hackiewicz, Ma?gorzata Kopytko, Jaros?aw Rutkowski, Proceedings . 2019,第1期

机译：基于INAS / GASB超晶格的中红外线间隙级联光电探测器在天然汽油和晶格 - 不匹配的GAAs基材上生长
4. Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate [C] . Inada H., Miura K., Iguchi Y., International Conference on Indium Phosphide and Related Materials . 2013

机译：具有在InP衬底上生长的InAs / GaSb II型量子阱的中红外光电探测器
5. Defect investigations in InAs/GaSb type-II strained layer superlattice. [D] . Klein, Brianna. 2014

机译：InAs / GaSb II型应变层超晶格中的缺陷研究。
6. Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy [O] . D. Benyahia, Ł. Kubiszyn, K. Michalczewski, 2018

机译：GaAs衬底上分子束外延生长的中波和长波InAs / GaSb超晶格的电学性质
7. InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates [O] . 2019

机译：基于INAS / GASB超晶格的中红外线间隙级联光电探测器在天然汽油和晶格 - 不匹配的GAAs基材上生长

Mid-infrared Sensors with InAs/GaSb Superlattice Absorption Layers Grown on InP Substrates

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