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首页> 外文期刊>Physics and Materials Chemistry >Variation of Excess Minority Carriers Density in Function to Silicon Solar Cell Paremeters Involving Excitons Effects
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Variation of Excess Minority Carriers Density in Function to Silicon Solar Cell Paremeters Involving Excitons Effects

机译：功能中过多的少数载流子密度对涉及激子效应的硅太阳能电池参数的影响

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In this work, we have studied the variations of excess minority carriers density in the base in function to some parameters to the silicon solar cell taking into account excitons effects. To do this, we have taken the expressions of excess electrons density in the base obtained by resolution of the differential equations of charge transport in static condition, the study of here variations are done in function to some cell parameters such as the binding coefficient between electrons and excitons and the base thickness in strong coupling. The profile of the excess electron variation in function to the base thickness for a strong coupling shows that, at the base junction, he is independent to the binding coefficient. This invariance is done to the intervention of the electric field that prevails in the depletion region which dissociates almost all excitons arriving at the junction. In depth, a strong coupling coefficient decreases the excess minority carriers density due to recombination that occur with excitons. The excess electrons density variation enabled us to know that when the coupling is strong, the doping level decreases the electrons density caused by the increase of recombination region due to the introduction of many impurities.
机译：在这项工作中，我们考虑了激子效应，研究了基体中多余的少数载流子密度在功能上对硅太阳能电池某些参数的变化。为此，我们通过解析静态条件下的电荷传输微分方程，获得了基体中多余电子密度的表达式，此处对某些电池参数（例如电子之间的结合系数）的函数进行了研究与激子和强耦合中的基底厚度。对于强耦合，功能上对基厚的过量电子变化的曲线表明，在基结处，他与结合系数无关。这种不变性是对耗尽区中普遍存在的电场的干预而完成的，该电场使几乎所有到达结的激子解离。在深度上，由于与激子发生重组，强耦合系数降低了多余的少数载流子密度。过量的电子密度变化使我们知道，当耦合很强时，由于引入了许多杂质，掺杂水平降低了由于复合区增加而引起的电子密度。

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