CVD Growth of ZrC Layers at Different Temperatures

BAB Alawad; S Biira; H Bissett; JT Nel; TT Hlatshwayo; PL Crouse; JB Malherbe

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CVD Growth of ZrC Layers at Different Temperatures

机译：在不同温度下CVD生长ZrC层

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Zirconium carbide (ZrC) layers were grown on a graphite substrate by chemical vapour deposition (CVD) at 1250°C, 1300°C and 1350°C. Zirconium tetrachloride (ZrCl4), methane (CH4), hydrogen (H2) and argon (Ar) were used as precursors. The deposited ZrC layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XDR showed ZrC characteristic peaks with free carbon. Free carbon incorporated in the ZrC layer increased with deposition temperature. The average of grain size also increased with deposition temperature. The latter findings were confirmed by SEM results.

机译：通过化学气相沉积（CVD）在1250°C，1300°C和1350°C的石墨衬底上生长碳化锆（ZrC）层。四氯化锆（ZrCl4），甲烷（CH4），氢（H2）和氩气（Ar）被用作前体。沉积的ZrC层通过X射线衍射（XRD）和扫描电子显微镜（SEM）进行表征。 XDR显示具有游离碳的ZrC特征峰。 ZrC层中结合的自由碳随沉积温度的增加而增加。晶粒平均尺寸也随沉积温度而增加。 SEM的结果证实了后者的发现。

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《Physics and Materials Chemistry》 |2016年第1期|共4页
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BAB Alawad; S Biira; H Bissett; JT Nel; TT Hlatshwayo; PL Crouse; JB Malherbe;
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CVD Growth of ZrC Layers at Different Temperatures

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