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Microstructure of V3Ga Superconducting Wire Using Cu/V with High Ga Contents

机译：高Ga含量的Cu / V对V3Ga超导线的显微组织

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Hishinuma et al . has established a new Powder-In-Tube (PIT) process using a high Ga content Cu-Ga compound in order to improve the superconducting property of the V3Ga compound wire. In this study, we investigated the microstructure of this high Ga content Cu-Ga/V composite superconducting wire. Three different contrasts of the matrix, V-Ga phase and Cu-Ga core were observed by SEM observation in the cross section of 19-multifilament wire. The V-Ga phase was confirmed by SEM mapping. The area fraction of V-Ga phase increased when Ga content increased from 30% to 50%. Thin film sample with V-Ga phase for TEM observation was fabricated by FIB. Selected area diffraction pattern was obtained for V matrix, V-Ga phase and Cu-Ga core. The ratio of V to Ga in V-Ga phase was close to V3Ga according to the EDS result. The interface between V matrix and V-Ga phase was linear, while the interface between Cu-Ga core and V-Ga phase was not linear. On the other hand, there were some granular grains observed in V-Ga phase around Cu-Ga core.
机译：久沼等。为了改善V 3 Ga化合物导线的超导性能，已经建立了一种使用高Ga含量的Cu-Ga化合物的新型粉末工艺（PIT）。在这项研究中，我们研究了这种高Ga含量的Cu-Ga / V复合超导线材的微观结构。通过SEM观察在19根复丝的横截面中观察到基质，V-Ga相和Cu-Ga核的三种不同的对比。通过SEM作图确认了V-Ga相。当Ga含量从30％增加到50％时，V-Ga相的面积分数增加。 FIB制备了用于TEM观察的V-Ga相薄膜样品。获得了V基体，V-Ga相和Cu-Ga核的选定区域衍射图。根据EDS结果，V-Ga相中V与Ga之比接近于V 3 Ga。 V基体与V-Ga相之间的界面是线性的，而Cu-Ga核与V-Ga相之间的界面不是线性的。另一方面，在Cu-Ga核周围的V-Ga相中观察到一些粒状晶粒。

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