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首页> 外文期刊>World Journal of Nuclear Science and Technology >New Method for Diagnostics of Ion Implantation Induced Charge Carrier Traps in Micro- and Nanoelectronic Devices
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New Method for Diagnostics of Ion Implantation Induced Charge Carrier Traps in Micro- and Nanoelectronic Devices

机译：微纳电子器件中离子注入诱导的载流子阱诊断的新方法

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An important problem of defect charging in electron-hole plasma in a semiconductor electronic device is investigated using the analogy of dust charging in dusty plasmas. This investigation yielded physical picture of the problem along with the mathematical model. Charging and discharging mechanism of charge carrier traps in a semiconductor elec-tronic device is also given. Potential applications of the study in semiconductor device technology are discussed. It would be interesting to find out how dust acoustic waves in electron-hole plasma in micro and nanoelectronic devices can be useful in finding out charge carrier trap properties of impurities or defects which serve as dust particles in elec-tron-hole (e-h) plasma. A new method based on an established technique “deep level transient spectroscopy” (DLTS) is described here suggesting the determination of properties of charge carrier traps in present and future semiconductor devices by measuring the frequency of dust acoustic waves (DAW). Relationship between frequency of DAW and properties of traps is described mathematically proposing the basis of a technique, called here, dust mode frequency deep level transient spectroscopy (DMF-DLTS).
机译：使用尘土等离子体中的尘埃电荷的类比，研究了半导体电子器件中电子空穴等离子体中的缺陷电荷的重要问题。这项研究得出了问题的物理图景以及数学模型。还给出了半导体电子器件中载流子陷阱的充电和放电机理。讨论了该研究在半导体器件技术中的潜在应用。找出微和纳米电子设备中电子空穴等离子体中的尘埃声波如何用于找出用作电子-空穴（eh）等离子体中的尘埃粒子的杂质或缺陷的电荷载流子俘获性质，将是很有意思的。本文介绍了一种基于已建立技术“深电平瞬态光谱法”（DLTS）的新方法，该方法建议通过测量粉尘声波（DAW）的频率来确定当前和未来半导体器件中载流子陷阱的性质。数学上描述了DAW的频率与阱的特性之间的关系，提出了一种技术的基础，这里称之为尘埃模式频率深能级瞬态光谱法（DMF-DLTS）。

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