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首页> 外文期刊>World Journal of Condensed Matter Physics >IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma-Enhanced Chemical Vapor Deposition
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IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma-Enhanced Chemical Vapor Deposition

机译：使用超高频等离子体增强化学气相沉积技术在低衬底温度下生长的氮化硅膜的红外光谱研究

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摘要

Hydrogenated amorphous silicon nitride (a-SiNx:H) films have been grown from a SiH4–N2 gas mixture through very high frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) at 50℃. The films are dense and transparent in the visible region. The peak frequency of the Si–N stretching mode in the IR absorption spectrum increases with increasing N–H bond density, which is similar to the behavior of a-SiNx:H films grown from SiH4–NH3 gas. During storage in a dry air atmosphere, the Si–O absorption increases. A large shift in the peak frequency of the Si–N stretching mode in the initial stage of oxidation, which is higher than the shift expected from the increase in the N–H bond density, is mainly caused by the change in the sum of electronegativity of nearest neighbors around the Si–N bond due to the increase in the Si–O bond density.
机译：氢化非晶硅氮化物（a-SiNx：H）膜是从SiH4-N2气体混合物中通过50摄氏度的甚高频（VHF）等离子体增强化学气相沉积（PECVD）生长而成的。薄膜在可见光区域是致密透明的。红外吸收光谱中Si–N拉伸模式的峰值频率随N–H键密度的增加而增加，这与从SiH4-NH3气体中生长的a-SiNx：H薄膜的行为相似。在干燥空气中储存期间，Si-O吸收增加。在氧化初期，Si-N拉伸模式的峰值频率有很大的变化，这比从NH键密度增加所预期的变化要大，这主要是由电负性总和的变化引起的由于Si-O键密度的增加，Si-N键周围最近的邻居的数量增加。

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