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Effect of Temperature on I-V Characteristic for ZnO/CuO

机译：温度对ZnO / CuO的I-V特性的影响

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摘要

Research on nonmaterials has become increasingly popular because of their unique physical, chemical, optical and catalytic properties compared to their bulk counterparts. Therefore, many efforts have been made to synthesize multidimensional nanostructures for new and efficient nanodevices. Among those materials, zinc oxide (ZnO) has gained substantial attention owing to many outstanding properties. ZnO besides its wide band gap of 3.34 eV exhibits a relatively large excitons binding energy (60 meV) at room temperature which is attractive for optoelectronic applications. Likewise, cupric oxide (CuO) has a narrow band gap of 1.2 eV and a variety of chemo-physical properties that are attractive in many fields. Moreover, composite nanostructures of these two oxides (CuO/ZnO) may pave the way for various new applications. So in this thesis, eight samples of CuO/ZnO junction were synthesized and exposed to temperatures 60, 70, 80, 90, 100, 110, 120 and 130. The electrical properties of Schottky diode junctions were analyzed by I-V measurements under the influence of direct solar radiation and, lag of radiation (darkness) which shows the semi-logarithmic I-V characteristic curve of the fabricated photodiodes. Also energy band gap was estimated and the morphology and particle sizes of the as-prepared sample were determined by SEM. The SEM images of ZnO + CuO sample films were annealed at 60 ° C to 130 ° C step 10.
机译：由于非材料的独特的物理，化学，光学和催化性质，与非材料相比，非材料的研究已变得越来越流行。因此，已经进行了许多努力来合成用于新型和有效的纳米器件的多维纳米结构。在这些材料中，氧化锌（ZnO）由于具有许多出色的性能而备受关注。 ZnO除具有3.34 eV的宽带隙外，在室温下还具有相对较大的激子结合能（60 meV），这对光电应用具有吸引力。同样，氧化铜（CuO）具有1.2 eV的窄带隙和多种化学物理特性，在许多领域中都具有吸引力。此外，这两种氧化物的复合纳米结构（CuO / ZnO）可能为各种新应用铺平道路。因此，在本论文中，我们合成了八个样品的CuO / ZnO并暴露于60、70、80、90、100、110、120和130的温度下。直接太阳辐射，以及辐射滞后（暗度），它显示了所制造光电二极管的半对数IV特性曲线。还估计能带隙，并通过SEM确定所制备样品的形态和粒径。 ZnO + CuO样品薄膜的SEM图像在60°C至130°C的步骤10中退火。

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