• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Basic and Applied Physics >Quantitative Analyses of Negative Interface Trapped Charge in p-Type Si Wafer Studied by Frequency-Dependent Alternating Current Surface Photovoltage Technique
【24h】

Quantitative Analyses of Negative Interface Trapped Charge in p-Type Si Wafer Studied by Frequency-Dependent Alternating Current Surface Photovoltage Technique

机译：随频率变化的交流表面光电压技术研究p型硅片中负界面俘获电荷的定量分析

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The conventionally defined oxide charge (Qo) in thermally oxidized p-type Si(001) wafers is investigated by the frequency-dependent alternating current (AC) surface photovoltage (SPV). Upon etching the oxide layer, a minimum AC SPV was observed nearby SiO2–Si interface. The reduction of AC SPV indicates the appearance of a negative charge. This strongly suggests that a fixed oxide charge (Qf) and oxide trapped charge (Qot) might have been etched off. Then, the possible charge must be Qit which is located to be approximately 2.7 nm from the SiO2-Si interface. This explains that Qf may be situated farther than Qit from the SiO2-Si interface. The Qit density (Dit) is calculated to be 9x1010 cm2?eV-1 by analysing the AC SPV vs frequency relationship which is in good agreement with the previous result. The HF solution-etched p-type Si surface can be positive possibly because Si dangling bonds capture holes from p-type Si substrate. This positive charge may not have the same characteristic as positive Qf. It is because Qf is stable in air exposure at room temperature, in contrast, the positive charge on HF solution-dipped p-type Si surface decreases gradually with air exposure time in the measurements of frequency-dependent AC SPV as previously reported.
机译：通过频率相关的交流电（AC）表面光电压（SPV）研究了热氧化的p型Si（001）晶片中常规定义的氧化物电荷（Qo）。蚀刻氧化物层时，在SiO2-Si界面附近观察到最小的AC SPV。 AC SPV的降低表明出现负电荷。这强烈表明可能已经蚀刻掉了固定的氧化物电荷（Qf）和氧化物捕获的电荷（Qot）。然后，可能的电荷必须为Qit，其位置距SiO2-Si界面约2.7 nm。这说明Qf可能比SiO2-Si界面的位置离Qit远。通过分析AC SPV与频率的关系，可以得出Qit密度（Dit）为9x1010 cm2？eV-1，这与先前的结果非常吻合。 HF溶液蚀刻的p型Si表面可能为正，这是因为Si的悬空键捕获了来自p型Si衬底的空穴。该正电荷可能不具有与正Qf相同的特性。这是因为Qf在室温下暴露于空气中是稳定的，相反，如先前报道的那样，在测量频率相关的AC SPV时，浸入HF溶液的p型Si表面上的正电荷随着暴露时间的增加而逐渐降低。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号