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首页> 外文期刊>Journal of Basic and Applied Physics >Simulation and Modeling of Self-Heating Effects in Heterojunction Bipolar Transistors
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Simulation and Modeling of Self-Heating Effects in Heterojunction Bipolar Transistors

机译：异质结双极晶体管自热效应的仿真与建模

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In this work, we investigate the self-heating effects on n-p-n Si heterojunction bipolar transistors (HBTs) with SiGe base and AlGaAs/GaAs HBTs with graded GaAs base via Technology CAD (TCAD) simulation study. Using fully coupled energy balance coupled with thermionic emission transport, two-dimensional numerical process and device simulations have been performed. It is observed that both the self-heating and local temperature increase due to higher internal device power dissipation. Dependence of direct current (DC), alternating current (AC) and self-heating effects on alloy composition of SiGe in the base region are investigated. It is shown that the self heating in SiGe HBTs is high (compared to identical Si BJTs) and significant electrical performance degradation takes place in SiGe HBTs.
机译：在这项工作中，我们通过技术CAD（TCAD）模拟研究，研究了具有SiGe基层的n-p-n Si异质结双极晶体管（HBT）和具有渐变GaAs基的AlGaAs / GaAs HBTs的自热效应。使用完全耦合的能量平衡和热电子发射传输，已进行了二维数值过程和设备仿真。可以看出，由于内部器件功耗较高，自热和局部温度都会升高。研究了直流（DC），交流（AC）和自热效应对基区中SiGe合金成分的影响。结果表明，SiGe HBT中的自发热很高（与相同的Si BJT相比），SiGe HBT中的电性能显着下降。

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