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Physical Sil-xGex/Si Heterojunction Bipolar Transistor Model for Device andCircuit Simulation

机译：用于器件和电路仿真的物理sil-xGex / si异质结双极晶体管模型

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A physical but compact Si(1-x)Ge(x)/Si heterojunction bipolar transistor (HBT)model suited for device design and circuit simulation is presented. The model is based on the de Graaf-Kloosterman formalism for the modeling of the bipolar transistors, but adds important heterostructure device physics as well as physical properties of SiGe material. The model, implemented in the APLAC circuit simulator, shows how currents and charges depend on minority carrier concentrations, which in turn are functions of the heterojunction voltages. In this way the influence of the built-in electric fields due to Ge concentration and doping density gradients, the bias-dependent transit times and the Early effect can be incorporated naturally. Comparisons between the model prediction and the experimental data for the DC current/voltage characteristics and cutoff frequencies in Si(1-x)Ge(x)/Si HBT's are included to demonstrate the model utility and accuracy.

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作者
Andersson, M.; Xia, Z.; Kuivalainen, P.; Pohjonen, H.;
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年度 1994
页码 1-26
总页数 26
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Bipolar transistors; Mathematical models; Heterojunction devices; Germanium alloys; Silicon alloys; Integrated circuits; Doped materials; Band theory;

机译：双极晶体管;数学模型;异质结器件;锗合金;硅合金;集成电路;掺杂材料;带理论;

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专利

1. Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors [J] . Ge Ji, Liu Hong-Gang, Su Yong-Bo, 中国物理：英文版 . 2012,第005期

机译：基于流体动力学仿真的物理模型用于InGaAs / InP双异质结双极晶体管的设计
2. Physical Models for SiC and Their Application to Device Simulations of SiC Insulated-Gate Bipolar Transistors [J] . Hatakeyama T., Fukuda K., Okumura H. Electron Devices, IEEE Transactions on . 2013,第2期

机译：SiC的物理模型及其在SiC绝缘栅双极晶体管的器件仿真中的应用
3. Compact Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistor model for device and circuit simulation [J] . Andersson M., Xia Z. IEE proceedings. Part G . 1995,第1期

机译：紧凑的Si / sub 1-x / Ge / sub x // Si异质结双极晶体管模型，用于器件和电路仿真
4. Physical heterojunction bipolar transistor model for microwave large signal simulation [C] . U Schaper, D Ahlers 25th European Microwave Conference Vol. Two: A6.1 to Invited 13 Bologna, Italy 4-7 September 95 . 1995

机译：用于微波大信号仿真的物理异质结双极晶体管模型
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion [O] . A. Martí, A. Luque -1

机译：用于高效光伏转换的三端异质结双极晶体管太阳能电池
7. Process development and device modelling of gallium arsenide heterojunction bipolar transistors [O] . Hovinen Anssi 2001

机译：砷化镓异质结双极晶体管的工艺开发和器件建模
8. Physics-Based Heterojunction Bipolar Transistor Model for Integrated Circuit Simulation. [R] . Fellows, J. A. 1993

机译：基于物理的异质结双极晶体管模型用于集成电路仿真。

Physical Sil-xGex/Si Heterojunction Bipolar Transistor Model for Device andCircuit Simulation

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