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首页> 外文期刊>Electron Devices, IEEE Transactions on >Physical Models for SiC and Their Application to Device Simulations of SiC Insulated-Gate Bipolar Transistors
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Physical Models for SiC and Their Application to Device Simulations of SiC Insulated-Gate Bipolar Transistors

机译：SiC的物理模型及其在SiC绝缘栅双极晶体管的器件仿真中的应用

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摘要

Important physical models for 4H silicon carbide (4H-SiC) are constructed based on the literature and experiments on the physical properties of 4H-SiC. The obtained physical models are implemented into a commercial device simulator, which is used for examining the potential performance of SiC insulated-gate bipolar transistors (IGBTs). Device simulation using these new physical models shows that the forward characteristics of the conventional type of planar SiC IGBTs are significantly poorer than those of SiC p-i-n diodes, even if the carrier lifetime is improved. It is shown that the degradation in the characteristics of the conventional SiC IGBT is caused by the limited conduction modulation at the cathode side of the n-base layer. We show that this problem can be resolved by applying device structures that induce a hole-barrier effect in the SiC IGBTs.
机译：基于文献和4H-SiC物理性能的实验，构建了4H碳化硅（4H-SiC）的重要物理模型。所获得的物理模型在商用设备仿真器中实现，该仿真器用于检查SiC绝缘栅双极晶体管（IGBT）的潜在性能。使用这些新的物理模型进行的器件仿真表明，即使提高了载流子寿命，传统类型的平面SiC IGBT的正向特性也比SiC p-i-n二极管的正向特性明显差。结果表明，常规SiC IGBT的特性下降是由n基极层阴极侧的有限的传导调制引起的。我们表明，可以通过应用在SiC IGBT中引起空穴阻挡效应的器件结构来解决此问题。

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