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首页> 外文学位 >Compact modeling of Silicon Carbide (SIC) Vertical Junction Field Effect Transistor (VJFET) in PSpice using Angelov model and PSpice simulation of analog circuit building blocks using SIC VJFET model.
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Compact modeling of Silicon Carbide (SIC) Vertical Junction Field Effect Transistor (VJFET) in PSpice using Angelov model and PSpice simulation of analog circuit building blocks using SIC VJFET model.

机译：使用Angelov模型在PSpice中对碳化硅（SIC）垂直结场效应晶体管（VJFET）进行紧凑建模，并使用SIC VJFET模型对PSpice模拟电路构建模块进行仿真。

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摘要

This thesis presents the development of compact model of novel Silicon Carbide (SiC) Vertical Junction Field Effect Transistor (VJFET) for high-power PSpice circuit simulation using empirical Angelov model. The model is capable of accurately replicating the device behavior for the DC and Transient conditions. The model was validated against measured data obtained from devices developed by Mississippi Center for Advanced Semiconductor Prototyping at MSU and SemiSouth Laboratories. The modeling approach is based on extracting Angelov Equations Coefficients from experimental device characteristics using non linear fitting for different parameters (temperature, width, etc). Multi-Dimensional Interpolation Technique is used to incorporate the effect of more than one parameter. The models developed in this research are expected to be valuable tools for electronic designers.; The developed SiC VJFET model was applied for investigating the characteristics of few analog circuits. The selected circuits of interest were Voltage Follower, Common Source Amplifier, Current Source and Differential Amplifier.
机译：本文提出了基于经验Angelov模型的新型大功率PSpice电路仿真的新型碳化硅（SiC）垂直结场效应晶体管（VJFET）的紧凑模型的开发。该模型能够针对DC和瞬态条件准确复制设备行为。该模型已根据MSU和SemiSouth Laboratories的密西西比州高级半导体原型开发中心开发的设备获得的测量数据进行了验证。该建模方法基于对不同参数（温度，宽度等）的非线性拟合从实验设备特性中提取Angelov方程系数。多维插值技术用于合并多个参数的影响。预期该研究中开发的模型将成为电子设计师的宝贵工具。所开发的SiC VJFET模型用于研究少量模拟电路的特性。所选的感兴趣的电路是电压跟随器，公共电源放大器，电流源和差分放大器。

著录项

  • 作者

    Purohit, Siddharth.;

  • 作者单位

    Mississippi State University.;

  • 授予单位 Mississippi State University.;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.
  • 学位 M.S.
  • 年度 2006
  • 页码 88 p.
  • 总页数 88
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

  • 入库时间 2022-08-17 11:39:31

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