Development of a PSPICE Model for 1200 V / 800 A SiC Bipolar Junction Transistor Power Module

Daniel Johannesson; Muhammad Nawaz

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Development of a PSPICE Model for 1200 V / 800 A SiC Bipolar Junction Transistor Power Module

机译：1200 V / 800 A SiC双极结型晶体管功率模块的PSPICE模型的开发

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The characteristics of a 1200 V and 800 A bipolar junction transistor (BJT) power module has been measured, simulated and verified for the first time in the PSPICE platform. The simulation model is based on a silicon carbide (SiC) Gummel-Poon model for high power applications. The implemented model has been extended with temperature dependent equations in order to extend the BJT operating temperature range. PSPICE simulations are performed to extract technology dependent modeling parameters coupled with static and dynamic characteristics of BJTs at different temperatures and validated against the measured data. The performance of the SiC BJT model is fairly accurate and correlates well with the measured results over a wide temperature range.

机译：在PSPICE平台上首次测量，模拟和验证了1200 V和800 A双极结型晶体管（BJT）电源模块的特性。该仿真模型基于用于高功率应用的碳化硅（SiC）Gummel-Poon模型。为了扩展BJT工作温度范围，已采用温度相关方程式扩展了已实现的模型。进行PSPICE仿真以提取与技术相关的建模参数，以及在不同温度下BJT的静态和动态特性，并根据测量数据进行验证。 SiC BJT模型的性能相当准确，并且在很宽的温度范围内与测量结果具有很好的相关性。

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来源
《Materials science forum》 |2015年第2015期|830-833|共4页
作者
Daniel Johannesson; Muhammad Nawaz;
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作者单位

ABB Corporate Research, Forskargraend 7, SE-72178 Vaesteras, Sweden;

ABB Corporate Research, Forskargraend 7, SE-72178 Vaesteras, Sweden;

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原文格式 PDF
正文语种 eng
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关键词
Silicon carbide; 4H-SiC; PSPICE; Device Modeling; Device simulation; 4H-SiC BJT;

机译：碳化硅;4H-SiC;PSPICE;设备建模;设备仿真;4H-SiC BJT;

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专利

1. 1200 V, 3.3 mΩ SiC bipolar junction transistor power modules [J] . M. Domeij, A. Konstantinov, B. Buono, Materials science forum . 2013,第期

机译：1200 V，3.3mΩSiC双极结型晶体管电源模块
2. Analytical PSpice PSpice model for SiC MOSFET based high power modules [J] . Johannesson Daniel, Nawaz Muhammad Microelectronics journal . 2016,第Jula期

机译：基于SiC MOSFET的大功率模块的PSpice解析PSpice模型
3. Development of a Simple Analytical PSpice Model for SiC-Based BJT Power Modules [J] . Johannesson Daniel, Nawaz Muhammad Power Electronics, IEEE Transactions on . 2016,第6期

机译：SiC基BJT功率模块的简单分析PSpice模型的开发
4. 1200 V, 3.3 mΩ SiC bipolar junction transistor power modules [C] . M. Domeij, A. Konstantinov, B. Buono, European conference on silicon carbide and related materials . 2013

机译：1200 V，3.3MΩSiC双极连接晶体管电源模块
5. Compact modeling of Silicon Carbide (SIC) Vertical Junction Field Effect Transistor (VJFET) in PSpice using Angelov model and PSpice simulation of analog circuit building blocks using SIC VJFET model. [D] . Purohit, Siddharth. 2006

机译：使用Angelov模型在PSpice中对碳化硅（SIC）垂直结场效应晶体管（VJFET）进行紧凑建模，并使用SIC VJFET模型对PSpice模拟电路构建模块进行仿真。
6. Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module [O] . Maosheng Zhang, Na Ren, Qing Guo, 2020

机译：1200V / 200A全SiC电源模块在开启瞬态时上侧和下侧开关的vgs特性的建模和分析
7. PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation [O] . Ceccarelli, Lorenzo, Iannuzzo, Francesco, Nawaz, Muhammad 2016

机译：用于siC功率mOsFET模块的pspice建模平台，具有广泛的实验验证
8. Exploratory Development of SiC Bipolar Transistors and GaN heterojunction Bipolar Transistors for High-Power Switching Applications. [R] . Cooper, J. A. 2003

机译：用于大功率开关应用的siC双极晶体管和GaN异质结双极晶体管的探索性开发。

Development of a PSPICE Model for 1200 V / 800 A SiC Bipolar Junction Transistor Power Module

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